M29W400DB70N1

Product Overview

Category

M29W400DB70N1 belongs to the category of Flash Memory.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W400DB70N1 has a storage capacity of 4 megabits (512 kilobytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Low power consumption: Efficient energy usage prolongs battery life in portable devices.

Package

The M29W400DB70N1 is available in a compact surface-mount package.

Essence

The essence of M29W400DB70N1 lies in its ability to provide reliable and high-capacity data storage in various electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400DB70N1 flash memory chips.

Specifications

• Storage Capacity: 4 Megabits (512 Kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP48

Detailed Pin Configuration

The M29W400DB70N1 flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. OE#
32. BYTE#
33. RY/BY#
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. VSS
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Erase and Program Operations: The M29W400DB70N1 supports both sector erase and byte program operations.
• Automatic Page Write: Allows for efficient programming of multiple bytes in a single operation.
• Hardware Data Protection: Provides protection against accidental data modification during power transitions.
• Software Data Protection: Enables software-based protection of specific memory sectors.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Reliable data retention
• Compact package size

Disadvantages

• Limited compatibility with certain older devices that do not support parallel flash memory interfaces.

Working Principles

The M29W400DB70N1 flash memory chip utilizes a parallel interface to communicate with the host device. It stores data using floating-gate transistors, which can be electrically programmed and erased. When data is written to the chip, charges are trapped in the floating gates, representing the stored information. During read operations, the charges are detected to retrieve the stored data.

Detailed Application Field Plans

The M29W400DB70N1 flash memory chip finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to M29W400DB70N1 flash memory chip include: - M29W400DT70N6: Similar specifications with different package type (TSOP40) - M29W400DB55N6: Lower storage capacity (2 Megabits) with similar characteristics and pin configuration - M29W200DT70N1: Half the storage capacity (2 Megabits) with similar specifications and features