MT25QL01GBBA8E12-0SIT TR

Product Overview

Category

MT25QL01GBBA8E12-0SIT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, laptops, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: MT25QL01GBBA8E12-0SIT TR has a storage capacity of 1 gigabit (1 Gb).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: This memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable: It provides high endurance and data retention capabilities, ensuring long-term reliability.

Package

MT25QL01GBBA8E12-0SIT TR comes in a compact surface-mount package, which facilitates easy integration into electronic circuit boards.

Essence

The essence of MT25QL01GBBA8E12-0SIT TR lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel containing a specific quantity of memory devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 1 gigabit (1 Gb)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 133 MHz
• Package Type: 8-contact WSON (8x6 mm)

Detailed Pin Configuration

MT25QL01GBBA8E12-0SIT TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground connection
3. HOLD: Hold input for suspending ongoing operations
4. WP: Write Protect input for protecting memory contents
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Additional serial data input/output
8. SIO3: Additional serial data output

Functional Features

• High-speed read and write operations
• Sector erase and program operations
• Dual/Quad I/O support for faster data transfer
• Software and hardware protection mechanisms
• Deep power-down mode for ultra-low power consumption
• Over-the-air firmware updates (OTA) support

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Compact package size

Disadvantages

• Limited compatibility with certain legacy systems
• Relatively higher cost compared to traditional non-volatile memory options

Working Principles

MT25QL01GBBA8E12-0SIT TR utilizes flash memory technology to store data. It employs a Serial Peripheral Interface (SPI) for communication with the host device. The memory cells within the device are organized into sectors, allowing for efficient read, write, and erase operations.

Detailed Application Field Plans

MT25QL01GBBA8E12-0SIT TR finds applications in various electronic devices that require non-volatile memory storage. Some potential application fields include: - Smartphones and tablets - Laptops and desktop computers - Automotive electronics - Industrial control systems - Internet of Things (IoT) devices - Wearable technology

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT25QL01GBBA8E12-0SIT TR include: - W25Q128JVSIQ (Winbond) - S25FL512SAGMFI011 (Cypress Semiconductor) - MX25L12835FM2I-10G (Macronix)

These alternative models provide comparable storage capacity, interface compatibility, and performance characteristics.

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