MT25TL512BBA8E12-0AAT TR

Product Overview

Category

MT25TL512BBA8E12-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in MT25TL512BBA8E12-0AAT TR remains intact even when power is turned off.
• High capacity: This device offers a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: MT25TL512BBA8E12-0AAT TR has built-in error correction mechanisms that enhance data integrity.
• Low power consumption: This product is designed to minimize energy usage, making it suitable for battery-powered devices.

Package

MT25TL512BBA8E12-0AAT TR comes in a compact surface-mount package, which facilitates easy integration into circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT25TL512BBA8E12-0AAT TR is typically packaged in reels or trays, with each reel containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: NOR Flash
• Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

MT25TL512BBA8E12-0AAT TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Software and hardware protection mechanisms
• Efficient power management features
• Error correction and detection mechanisms

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for ample data storage.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit compared to some alternative memory technologies.

Working Principles

MT25TL512BBA8E12-0AAT TR utilizes the NOR flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). The stored data can be accessed by applying appropriate voltages to the memory cells.

Detailed Application Field Plans

MT25TL512BBA8E12-0AAT TR finds applications in various fields, including: 1. Consumer electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for data storage. 2. Automotive: Utilized in infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS). 3. Industrial automation: Employed in programmable logic controllers (PLCs), robotics, and control systems for data storage and firmware updates. 4. Medical devices: Used in medical imaging equipment, patient monitoring systems, and diagnostic devices for storing critical data.

Detailed and Complete Alternative Models

1. MT25QL512ABA8E12-0SIT TR
2. S25FL512SAGMFI011
3. W25Q512JVSIQ
4. IS25LP512M-JBLE

These alternative models offer similar specifications and functionality to MT25TL512BBA8E12-0AAT TR and can be considered as alternatives based on specific requirements.

In conclusion, MT25TL512BBA8E12-0AAT TR is a non-volatile memory device with high capacity, fast access time, and low power consumption. It finds applications in various electronic devices across different industries. While it has limitations in endurance and cost, it offers reliable data storage and retrieval capabilities.