MT25TL512BBA8ESF-0AAT

Basic Information Overview

• Category: Memory chip
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High-speed data transfer
  • Low power consumption
• Package: Surface mount technology (SMT)
• Essence: Flash memory
• Packaging/Quantity: Single chip, quantity varies based on customer requirements

Specifications

• Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The MT25TL512BBA8ESF-0AAT has a total of 8 pins. The pin configuration is as follows:

1. Chip Select (/CS) - Active low input used to enable/disable the chip
2. Serial Clock (SCK) - Input for synchronizing data transfer
3. Serial Data Input (SI) - Input for sending data to the chip
4. Serial Data Output (SO) - Output for receiving data from the chip
5. Write Protect (/WP) - Input for write protection
6. Hold (/HOLD) - Input for suspending operations temporarily
7. VCC - Power supply voltage
8. Ground (GND) - Ground reference

Functional Features

• High-speed data transfer up to 133 MHz
• Flexible erase and program operations
• Sector-based architecture for efficient data management
• Hardware and software write protection options
• Deep power-down mode for ultra-low power consumption
• Error correction code (ECC) support for data integrity

Advantages

• Fast data transfer speeds enhance overall system performance
• Low power consumption prolongs battery life in portable devices
• High endurance with 100,000 erase/program cycles
• Reliable data retention for up to 20 years
• Compact package size suitable for space-constrained designs

Disadvantages

• Limited capacity compared to higher-end memory chips
• Relatively slower write speeds compared to other memory technologies
• Vulnerable to physical damage if mishandled or exposed to extreme conditions

Working Principles

The MT25TL512BBA8ESF-0AAT is based on flash memory technology. It utilizes a floating-gate transistor structure to store and retrieve digital information. The memory cells are organized into sectors, allowing for efficient erase and program operations. Data is written by charging or discharging the floating gate, altering the threshold voltage of the transistor. This change in threshold voltage determines the stored data value.

Detailed Application Field Plans

The MT25TL512BBA8ESF-0AAT is widely used in various applications, including: 1. Consumer electronics: Smartphones, tablets, digital cameras 2. Automotive: Infotainment systems, instrument clusters 3. Industrial: Embedded systems, automation equipment 4. Networking: Routers, switches, network storage devices 5. Medical: Patient monitoring devices, medical imaging systems

Detailed and Complete Alternative Models

1. MT25QL512ABA8ESE-0SIT
2. S25FL512SAGMFI001
3. W25Q512JVSIQ
4. IS25LP512M-JBLE
5. MX25L51245GMI-10G

These alternative models offer similar specifications and functionality to the MT25TL512BBA8ESF-0AAT, providing customers with options based on their specific requirements.

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