MT25TL512HBA8E12-0AAT TR

Product Overview

Category

MT25TL512HBA8E12-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, laptops, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is disconnected.
• High capacity: The MT25TL512HBA8E12-0AAT TR offers a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: This memory device has a high endurance and can withstand multiple read and write cycles without data corruption.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Compact package: The MT25TL512HBA8E12-0AAT TR comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT25TL512HBA8E12-0AAT TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with a standard quantity of 250 units per reel/tray.

Specifications

• Memory Type: NOR Flash
• Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Package Type: 8-pin SOIC (Small Outline Integrated Circuit)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Hold input for suspending ongoing operations
4. WP: Write protect input for protecting the memory content
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Serial data input/output
8. SIO3: Serial data input/output

Functional Features

• High-speed read and write operations
• Sector erase and block erase functions for efficient data management
• Protection mechanisms to prevent accidental data modification
• Software and hardware write protection options
• Fast program and erase times for improved performance
• Error correction code (ECC) support for enhanced data integrity

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Compact package enables easy integration into various electronic devices.
• Low power consumption extends battery life in portable devices.
• Fast access time enhances overall system performance.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit compared to some alternative memory technologies.
• Requires additional circuitry for interfacing with the host device.

Working Principles

The MT25TL512HBA8E12-0AAT TR utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the memory controller applies appropriate voltages to the memory cells and measures the resulting current flow to determine the stored data. During programming or erasing, high voltages are applied to modify the charge trapped in the floating gate.

Detailed Application Field Plans

The MT25TL512HBA8E12-0AAT TR is widely used in various applications, including: - Mobile devices: Smartphones, tablets, and portable media players. - Computing systems: Laptops, desktop computers, and servers. - Automotive electronics: Infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS). - Industrial equipment: Embedded systems, control units, and data loggers. - Consumer electronics: Digital cameras, gaming consoles, and set-top boxes.

Detailed and Complete Alternative Models

1. MT25QL512ABA8E12-0AAT TR
2. MX25L51245GMI-10G
3. S25FL512SAGMFI011
4. W25Q512JVSIQ
5. AT25SF041-SSHD-T

These alternative models offer similar specifications and functionality to the MT25TL512HBA8E12-0AAT TR, providing options for different design requirements and supply chain considerations.

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