MT25TL512HBA8ESF-0AAT

Product Overview

Category

MT25TL512HBA8ESF-0AAT belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in MT25TL512HBA8ESF-0AAT is retained even when power is turned off.
• High capacity: This device has a storage capacity of 512 megabits (64 megabytes).
• High-speed data transfer: MT25TL512HBA8ESF-0AAT offers fast read and write speeds, enabling efficient data access.
• Reliable: It has a robust design that ensures data integrity and long-term reliability.
• Low power consumption: This product is designed to consume minimal power during operation.

Package

MT25TL512HBA8ESF-0AAT is available in a compact and standardized package, which facilitates easy integration into various electronic devices.

Essence

The essence of MT25TL512HBA8ESF-0AAT lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the requirements of the customer or manufacturer.

Specifications

• Storage Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT25TL512HBA8ESF-0AAT is as follows:

1. VCC: Power supply
2. GND: Ground
3. HOLD: Hold input
4. WP: Write protect input
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select input

Functional Features

• Fast Read/Write Operations: MT25TL512HBA8ESF-0AAT offers high-speed data transfer, enabling quick access to stored information.
• Sector Erase and Program: This device supports sector-based erase and program operations, allowing efficient management of data.
• Protection Mechanisms: It provides various protection mechanisms such as write protection and hold functionality to prevent accidental data modification or loss.
• Error Correction: MT25TL512HBA8ESF-0AAT incorporates error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer speeds
• Reliable and durable
• Low power consumption
• Compact package size

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other memory technologies

Working Principles

MT25TL512HBA8ESF-0AAT utilizes flash memory technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. The data is stored in these cells by trapping electrical charges. When reading the data, the charges are detected and converted back into digital information.

Detailed Application Field Plans

MT25TL512HBA8ESF-0AAT finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Smartphones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical devices - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

Some alternative models to MT25TL512HBA8ESF-0AAT include: - MT25QL512ABA8ESF-0AAT - MT25QU512ABA8ESF-0AAT - MT25TU512ABA8ESF-0AAT - MT25TX512ABA8ESF-0AAT

These models offer similar features and specifications, providing options for different application requirements.

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