MT29C1G12MAACAFAKD-6 IT TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Small form factor
• Package: Surface Mount Technology (SMT) package
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Model: MT29C1G12MAACAFAKD-6 IT TR
• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes (128 MB) x 8 bits
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed: 6 ns (nanoseconds)

Detailed Pin Configuration

The MT29C1G12MAACAFAKD-6 IT TR has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0 | Address input | | 3 | A1 | Address input | | ... | ... | ... | | 48 | CE# | Chip enable input | | 49 | WE# | Write enable input | | 50 | RE# | Read enable input | | ... | ... | ... | | 96 | DQ7 | Data input/output bit 7 | | 97 | DQ6 | Data input/output bit 6 | | ... | ... | ... | | 100 | DQ3 | Data input/output bit 3 |

Functional Features

• High-speed data transfer
• Reliable data storage
• Low power consumption
• Built-in error correction code (ECC)
• Block erase and program operations
• Page read and program operations

Advantages

• Fast data access and transfer speeds
• Compact size for space-constrained applications
• Low power consumption for energy efficiency
• Reliable data storage with built-in ECC
• Flexible erase and program operations

Disadvantages

• Limited capacity compared to other memory devices
• Higher cost per unit of storage compared to some alternatives
• Requires additional circuitry for interfacing with other components

Working Principles

The MT29C1G12MAACAFAKD-6 IT TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. The memory cells are accessed through an address bus, and data is transferred through a data bus. The device uses various internal algorithms and error correction techniques to ensure reliable data storage and retrieval.

Detailed Application Field Plans

The MT29C1G12MAACAFAKD-6 IT TR is commonly used in the following applications: 1. Solid-state drives (SSDs) 2. USB flash drives 3. Embedded systems 4. Consumer electronics 5. Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the MT29C1G12MAACAFAKD-6 IT TR include: 1. MT29F1G08ABADAWP-IT:D - 1 Gb NAND Flash Memory, TSOP package 2. MT25QL128ABA8ESF-0SIT - 128 Mb Quad SPI NOR Flash Memory, SOIC package 3. MT47H64M16HR-25E:H - 1 Gb DDR3 SDRAM, BGA package 4. MT41K256M16TW-107:P - 4 Gb DDR3L SDRAM, FBGA package 5. MT48LC32M16A2P-75:C - 512 Mb SDRAM, TSOP package

These alternative models offer different capacities, interfaces, and features to suit various application requirements.

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