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MT29F128G08CBECBH6-12:C
Basic Information Overview
- Category: Memory Device
- Use: Data storage and retrieval
- Characteristics:
- Non-volatile
- High capacity (128GB)
- High speed data transfer
- Low power consumption
- Package: BGA (Ball Grid Array)
- Essence: Flash memory chip
- Packaging/Quantity: Single chip
Specifications
- Model: MT29F128G08CBECBH6-12:C
- Capacity: 128GB
- Interface: NAND Flash
- Voltage: 3.3V
- Speed: Up to 100MB/s (Read), up to 50MB/s (Write)
- Operating Temperature: -40°C to +85°C
- Endurance: 10,000 Program/Erase cycles
Detailed Pin Configuration
The MT29F128G08CBECBH6-12:C has a total of 48 pins. The pin configuration is as follows:
- VCC
- VCCQ
- RE#
- WE#
- CLE
- ALE
- CE#
- R/B#
- WP#
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- GND
Functional Features
- High-speed data transfer for efficient read and write operations.
- Non-volatile memory ensures data retention even when power is disconnected.
- Low power consumption, making it suitable for battery-powered devices.
- Wide operating temperature range allows for use in various environments.
- High endurance with 10,000 program/erase cycles.
Advantages
- Large storage capacity of 128GB.
- Fast data transfer speeds enhance overall system performance.
- Reliable and durable due to high endurance.
- Low power consumption prolongs battery life.
- Suitable for a wide range of applications due to the wide operating temperature range.
Disadvantages
- Relatively higher cost compared to lower capacity memory devices.
- Limited compatibility with certain older systems or devices.
Working Principles
The MT29F128G08CBECBH6-12:C is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed by applying specific voltages to the appropriate pins. Reading data involves sensing the voltage levels stored in the memory cells and converting them back into digital information.
Detailed Application Field Plans
The MT29F128G08CBECBH6-12:C is widely used in various electronic devices that require high-capacity non-volatile memory. Some common application fields include: - Solid-state drives (SSDs) - Portable media players - Digital cameras - Smartphones and tablets - Industrial control systems - Automotive electronics
Detailed and Complete Alternative Models
- MT29F128G08CBECBH6-12:B
- MT29F128G08CBECBH6-12:A
- MT29F128G08CBECBH6-12:D
- MT29F128G08CBECBH6-12:E
These alternative models offer similar specifications and functionality, providing options for different system requirements.
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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT29F128G08CBECBH6-12:C dalam penyelesaian teknikal
Question: What is the capacity of the MT29F128G08CBECBH6-12:C?
Answer: The MT29F128G08CBECBH6-12:C has a capacity of 128 gigabits (16 gigabytes).Question: What is the operating voltage range for this memory device?
Answer: The operating voltage range for the MT29F128G08CBECBH6-12:C is typically between 2.7V and 3.6V.Question: What is the maximum clock frequency supported by this memory device?
Answer: The MT29F128G08CBECBH6-12:C supports a maximum clock frequency of 100 MHz.Question: Does this memory device support random access read and write operations?
Answer: Yes, the MT29F128G08CBECBH6-12:C supports random access read and write operations.Question: What is the page size of this memory device?
Answer: The page size of the MT29F128G08CBECBH6-12:C is 8 kilobytes.Question: Can this memory device be used in automotive applications?
Answer: Yes, the MT29F128G08CBECBH6-12:C is designed to meet the requirements of automotive applications.Question: Is this memory device compatible with standard NAND flash interfaces?
Answer: Yes, the MT29F128G08CBECBH6-12:C is compatible with standard NAND flash interfaces such as ONFI 2.3 and Toggle 2.0.Question: What is the typical endurance of this memory device?
Answer: The MT29F128G08CBECBH6-12:C has a typical endurance of 3,000 program/erase cycles per block.Question: Does this memory device support hardware data protection features?
Answer: Yes, the MT29F128G08CBECBH6-12:C supports hardware data protection features such as block lock and OTP (One-Time Programmable) protection.Question: What is the temperature range for reliable operation of this memory device?
Answer: The MT29F128G08CBECBH6-12:C is designed to operate reliably within a temperature range of -40°C to +85°C.