MT29F128G08CFABBWP-12:B TR

Product Overview

Category

The MT29F128G08CFABBWP-12:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CFABBWP-12:B TR offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick data transfer between the device and the memory.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CFABBWP-12:B TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F128G08CFABBWP-12:B TR is packaged in a surface-mount ball grid array (BGA) package. Each package contains one unit of the NAND flash memory.

Specifications

• Model: MT29F128G08CFABBWP-12:B TR
• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Package Type: BGA
• Package Dimensions: 14mm x 18mm

Detailed Pin Configuration

The MT29F128G08CFABBWP-12:B TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F128G08CFABBWP-12:B TR supports page program operations, allowing data to be written in individual memory pages.
• Block Erase Operation: It enables block erase operations, facilitating the removal of data from specific memory blocks.
• Read Operation: This NAND flash memory allows for efficient and reliable reading of stored data.
• Wear-Leveling Algorithm: The product incorporates wear-leveling algorithms to distribute write operations evenly across memory cells, enhancing overall lifespan and performance.
• Error Correction Code (ECC): ECC functionality is implemented to detect and correct errors that may occur during data transfer or storage.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast data transfer rate enhances overall device performance.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.
• RoHS compliance promotes environmental sustainability.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with certain legacy devices that do not support NAND interface.

Working Principles

The MT29F128G08CFABBWP-12:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where each cell stores multiple bits of data. The data is written and read by applying voltage to specific memory cells within the array. The page program operation allows data to be written in individual pages, while the block erase operation removes data from entire blocks. The wear-leveling algorithm ensures even distribution of write operations across memory cells, optimizing performance and lifespan.

Detailed Application Field Plans

The MT29F128G08CFABBWP