MT29F16G08AJADAWP-IT:D TR

Product Overview

Category

The MT29F16G08AJADAWP-IT:D TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F16G08AJADAWP-IT:D TR offers a storage capacity of 16 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The chip is packaged in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F16G08AJADAWP-IT:D TR is typically available in tape and reel packaging. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Memory Type: NAND Flash
• Capacity: 16 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F16G08AJADAWP-IT:D TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. VSS
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Page Program Operation: The chip allows for efficient programming of data in individual memory pages.
• Block Erase Operation: It supports block erase operations, enabling the removal of large chunks of data at once.
• Read and Write Operations: The MT29F16G08AJADAWP-IT:D TR facilitates fast and reliable read and write operations.
• Error Correction Code (ECC): This NAND flash memory chip incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It implements wear-leveling techniques to distribute data evenly across memory blocks, enhancing overall lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances device performance.
• Reliable performance ensures data integrity.
• Low power consumption prolongs battery life.
• Compact package allows for easy integration into various devices.

Disadvantages

• Limited endurance: NAND flash memory chips have a finite number of program/erase cycles before they degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F16G08AJADAWP-IT:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The chip uses electrical charges to represent binary data (0s and 1s) within the memory cells. During read and write operations, voltages are applied to specific pins to access and modify the stored data.

Detailed Application Field Plans

The MT29F16G08AJADAWP-IT:D TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing photos and videos captured by the camera.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, offering faster boot times and improved performance compared to traditional hard disk drives.
4. Portable media players: Used for storing music, videos, and other multimedia content.
5. Automotive electronics: Integrated into infotainment