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MT29F1G08ABBDAH4:D TR

MT29F1G08ABBDAH4:D TR

Product Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics: High capacity, fast read/write speeds, compact package
  • Package: Surface mount technology (SMT)
  • Essence: Non-volatile memory for reliable data retention
  • Packaging/Quantity: Tape and reel packaging, 3000 units per reel

Specifications

  • Memory Capacity: 1 gigabit (128 megabytes)
  • Interface: Parallel NAND Flash
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 50 megabytes per second (read), up to 10 megabytes per second (write)

Detailed Pin Configuration

The MT29F1G08ABBDAH4:D TR memory chip has the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. A0-A18: Address inputs
  4. CLE: Command latch enable
  5. ALE: Address latch enable
  6. RE: Read enable
  7. WE: Write enable
  8. WP: Write protect
  9. R/B: Ready/busy status
  10. DQ0-DQ15: Data input/output

Functional Features

  • High-speed data transfer for efficient read/write operations
  • Error correction code (ECC) for enhanced data reliability
  • Block management algorithm for wear leveling and bad block management
  • Internal voltage generation for simplified power supply requirements
  • Page read and program operations for flexible data handling

Advantages and Disadvantages

Advantages: - High capacity allows for ample data storage - Fast read/write speeds improve overall system performance - Compact package saves space in electronic devices - Reliable data retention ensures data integrity

Disadvantages: - Limited compatibility with certain older systems - Relatively high power consumption during operation

Working Principles

The MT29F1G08ABBDAH4:D TR memory chip utilizes NAND Flash technology to store and retrieve data. It consists of a grid of memory cells, where each cell can store multiple bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary values of the stored data.

During read operations, the memory controller sends the appropriate address and command signals to access the desired data. The memory chip retrieves the requested data and transfers it to the controller for further processing. Write operations involve sending the data to be stored along with the corresponding address and command signals.

Detailed Application Field Plans

The MT29F1G08ABBDAH4:D TR memory chip finds applications in various electronic devices, including:

  1. Smartphones and tablets: Used for storing operating system files, applications, and user data.
  2. Solid-state drives (SSDs): Provides non-volatile storage for faster boot times and improved system responsiveness.
  3. Digital cameras: Stores captured photos and videos for later retrieval.
  4. Automotive electronics: Enables data storage for infotainment systems, navigation systems, and vehicle diagnostics.
  5. Industrial control systems: Used for data logging, firmware storage, and program execution.

Detailed and Complete Alternative Models

  1. MT29F1G08ABADAWP-IT: Similar specifications, but with different packaging options.
  2. MT29F1G08ABAEAWP-IT: Higher temperature range (-40°C to +105°C) for industrial applications.
  3. MT29F1G08ABAFDWB-IT: Lower power consumption variant for battery-powered devices.

(Note: The above alternative models are for illustrative purposes and may not represent the complete range of available alternatives.)

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT29F1G08ABBDAH4:D TR dalam penyelesaian teknikal

  1. Question: What is MT29F1G08ABBDAH4:D TR?
    Answer: MT29F1G08ABBDAH4:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Question: What is the storage capacity of MT29F1G08ABBDAH4:D TR?
    Answer: The storage capacity of MT29F1G08ABBDAH4:D TR is 1 gigabit (Gb), which is equivalent to 128 megabytes (MB).

  3. Question: What is the interface used for connecting MT29F1G08ABBDAH4:D TR to a device?
    Answer: MT29F1G08ABBDAH4:D TR uses a standard 8-bit parallel interface for communication with the host device.

  4. Question: What is the operating voltage range of MT29F1G08ABBDAH4:D TR?
    Answer: MT29F1G08ABBDAH4:D TR operates at a voltage range of 2.7V to 3.6V.

  5. Question: What is the maximum data transfer rate supported by MT29F1G08ABBDAH4:D TR?
    Answer: MT29F1G08ABBDAH4:D TR supports a maximum data transfer rate of up to 50 megabytes per second (MB/s).

  6. Question: Can MT29F1G08ABBDAH4:D TR be used in industrial applications?
    Answer: Yes, MT29F1G08ABBDAH4:D TR is designed to meet the requirements of industrial-grade applications and can operate reliably in harsh environments.

  7. Question: Does MT29F1G08ABBDAH4:D TR support error correction codes (ECC)?
    Answer: Yes, MT29F1G08ABBDAH4:D TR supports hardware-based ECC to ensure data integrity and reliability.

  8. Question: Can MT29F1G08ABBDAH4:D TR be used as a boot device?
    Answer: Yes, MT29F1G08ABBDAH4:D TR can be used as a boot device in various embedded systems and applications.

  9. Question: Is MT29F1G08ABBDAH4:D TR compatible with different operating systems?
    Answer: Yes, MT29F1G08ABBDAH4:D TR is compatible with popular operating systems such as Linux, Windows, and Android.

  10. Question: What is the typical lifespan of MT29F1G08ABBDAH4:D TR?
    Answer: MT29F1G08ABBDAH4:D TR has a typical lifespan of several thousand program/erase cycles, ensuring long-term durability and reliability.