MT29F1G08ABBEAH4-ITX:E TR

Product Overview

Category

MT29F1G08ABBEAH4-ITX:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBEAH4-ITX:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F1G08ABBEAH4-ITX:E TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBEAH4-ITX:E TR is typically packaged in tape and reel format, with a quantity of 3000 units per reel.

Specifications

• Memory Type: NAND Flash
• Density: 1 Gb
• Interface: Parallel
• Organization: 128 M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-I48

Detailed Pin Configuration

The MT29F1G08ABBEAH4-ITX:E TR has the following pin configuration:

1. VCC
2. ALE/CLE
3. CE#
4. RE#
5. WE#
6. R/B#
7. WP#
8. NC
9. NC
10. I/O0
11. I/O1
12. I/O2
13. I/O3
14. I/O4
15. I/O5
16. I/O6
17. I/O7
18. NC
19. NC
20. GND

Functional Features

• Page Read/Program/Erase Operations: The MT29F1G08ABBEAH4-ITX:E TR supports efficient page read, program, and erase operations, allowing for flexible data manipulation.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Wear-Leveling: The product employs wear-leveling techniques to evenly distribute write operations across the memory cells, preventing premature cell degradation.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, ensuring reliable data storage.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick read and write operations.
• Reliable performance ensures data integrity.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F1G08ABBEAH4-ITX:E TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages and blocks, which can be read, programmed, or erased independently. When data is written, an electrical charge is applied to the memory cells, altering their state. Reading involves detecting the stored charge levels, while erasing clears the charge from the cells.

Detailed Application Field Plans

The MT29F1G08ABBEAH4-ITX:E TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F1G08ABBEAH4-ITX:E TR include: - MT29F1G08ABADAWP-ITX - MT29F1G08ABAEAWP-ITX - MT29F1G08ABBEAWP-ITX - MT29F1G08ABCEAWP-ITX

These models offer similar specifications and functionality, providing flexibility for different design requirements.

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