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MT29F1G16ABBDAH4-ITX:D TR
Product Overview
Category
MT29F1G16ABBDAH4-ITX:D TR belongs to the category of NAND Flash Memory.
Use
It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High storage capacity: The MT29F1G16ABBDAH4-ITX:D TR offers a storage capacity of 1 gigabit (1 Gb).
- Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
- Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
- Compact package: The MT29F1G16ABBDAH4-ITX:D TR comes in a small form factor, making it suitable for space-constrained applications.
- Durable design: It is designed to withstand harsh environmental conditions, ensuring data integrity and longevity.
Package and Quantity
The MT29F1G16ABBDAH4-ITX:D TR is available in a surface-mount package. The quantity may vary depending on the manufacturer or supplier.
Specifications
- Manufacturer: Micron Technology Inc.
- Part Number: MT29F1G16ABBDAH4-ITX:D TR
- Memory Type: NAND Flash
- Density: 1 Gb
- Interface: Parallel
- Supply Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Package Type: TSOP (Thin Small Outline Package)
- Pin Count: 48
Detailed Pin Configuration
The pin configuration of the MT29F1G16ABBDAH4-ITX:D TR is as follows:
- VCC
- ALE
- CLE
- CE#
- RE#
- WE#
- WP#
- R/B#
- I/O0
- I/O1
- I/O2
- I/O3
- I/O4
- I/O5
- I/O6
- I/O7
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- GND
Functional Features
- High-speed data transfer: The MT29F1G16ABBDAH4-ITX:D TR offers fast read and write speeds, enabling efficient data access.
- Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
- Wear leveling: This NAND flash memory utilizes wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
- Bad block management: It includes mechanisms for identifying and managing bad blocks, enhancing overall storage efficiency.
- Power-saving mode: The MT29F1G16ABBDAH4-ITX:D TR supports power-saving features, reducing energy consumption during idle periods.
Advantages and Disadvantages
Advantages
- High storage capacity
- Fast data transfer rate
- Reliable performance
- Compact form factor
- Durable design
Disadvantages
- Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
- Higher cost per gigabyte compared to other storage technologies like hard disk drives.
Working Principles
The MT29F1G16ABBDAH4-ITX:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating-gate transistor. When data is written, electrons are trapped in the floating gate, representing a binary value. To read the data, the charge level of the floating gate is measured.
Detailed Application Field Plans
The MT29F1G16ABBDAH4-ITX:D TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems
Alternative Models
Here are some alternative models that offer similar functionality: - MT29F1G08ABADAWP-ITX - MT29F1G08AB
Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT29F1G16ABBDAH4-ITX:D TR dalam penyelesaian teknikal
Sure! Here are 10 common questions and answers related to the application of MT29F1G16ABBDAH4-ITX:D TR in technical solutions:
Q1: What is the capacity of the MT29F1G16ABBDAH4-ITX:D TR memory module? A1: The MT29F1G16ABBDAH4-ITX:D TR has a capacity of 1 gigabit (128 megabytes).
Q2: What is the interface of the MT29F1G16ABBDAH4-ITX:D TR memory module? A2: It uses the NAND Flash interface.
Q3: What is the operating voltage range for the MT29F1G16ABBDAH4-ITX:D TR? A3: The operating voltage range is typically between 2.7V and 3.6V.
Q4: What is the maximum clock frequency supported by the MT29F1G16ABBDAH4-ITX:D TR? A4: The maximum clock frequency supported is 50 MHz.
Q5: Can the MT29F1G16ABBDAH4-ITX:D TR be used in industrial applications? A5: Yes, the MT29F1G16ABBDAH4-ITX:D TR is designed for industrial applications and can operate in harsh environments.
Q6: Does the MT29F1G16ABBDAH4-ITX:D TR support wear-leveling algorithms? A6: Yes, it supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.
Q7: What is the temperature range for the MT29F1G16ABBDAH4-ITX:D TR? A7: The temperature range is typically between -40°C and +85°C.
Q8: Can the MT29F1G16ABBDAH4-ITX:D TR be used in automotive applications? A8: Yes, it is suitable for automotive applications as it meets the required specifications for automotive-grade components.
Q9: What is the page size of the MT29F1G16ABBDAH4-ITX:D TR? A9: The page size is 2,112 bytes (2KB).
Q10: Does the MT29F1G16ABBDAH4-ITX:D TR support hardware data protection features? A10: Yes, it supports hardware data protection features such as ECC (Error Correction Code) and bad block management.
Please note that these answers are based on general information about the MT29F1G16ABBDAH4-ITX:D TR memory module. It is always recommended to refer to the datasheet or consult the manufacturer for specific details and application requirements.