MT29F32G08CBADAL83A3WC1

Product Overview

Category

MT29F32G08CBADAL83A3WC1 belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F32G08CBADAL83A3WC1 offers a storage capacity of 32 gigabits (4 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F32G08CBADAL83A3WC1 comes in a compact package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F32G08CBADAL83A3WC1 NAND flash memory is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact package dimensions and quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 32 gigabits (4 gigabytes)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Pin Configuration

The detailed pin configuration of MT29F32G08CBADAL83A3WC1 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Note: The pin configuration may vary depending on the specific package and manufacturer.

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for read or write operations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the product's lifespan.
• Bad Block Management: Automatically detects and manages bad blocks to maintain optimal performance.

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast data transfer rate enables quick read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited endurance with a maximum of 100,000 program/erase cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F32G08CBADAL83A3WC1 utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level within the cell.

During a write operation, the control circuitry applies a high voltage to the selected memory cell, causing electrons to tunnel through a thin oxide layer and modify the charge level. Reading data involves sensing the charge level of each memory cell.

The product's working principles are based on the principles of floating-gate transistors and electrical charge storage.

Detailed Application Field Plans

MT29F32G08CBADAL83A3WC1 finds applications in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. - Automotive electronics for data storage in infotainment systems, navigation systems, and instrument clusters. - Industrial control systems for storing firmware, configuration data, and log files.

Detailed Alternative Models

Several alternative models with similar specifications and features to MT29F32G08CBADAL83A3WC1 include: - Samsung K9GAG08U0E - Toshiba TH58NVG6D2ETA20 - Micron MT29F32G08CBACAWP

These alternative models can be considered as substitutes