MT29F64G08AKCCBH2-10Z:C

Product Overview

Category

MT29F64G08AKCCBH2-10Z:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AKCCBH2-10Z:C offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.
• Compact package: MT29F64G08AKCCBH2-10Z:C comes in a compact package, making it suitable for space-constrained devices.

Package and Quantity

The MT29F64G08AKCCBH2-10Z:C is available in a surface-mount package. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F64G08AKCCBH2-10Z:C
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F64G08AKCCBH2-10Z:C has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data.
• Random Access: Provides random access to any memory location for efficient data retrieval.
• Wear-Leveling: Implements wear-leveling algorithms to evenly distribute write operations and extend the lifespan of the memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity.
• Compact package size enables integration into various devices.
• Low power consumption prolongs battery life.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F64G08AKCCBH2-10Z:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltages to the control pins and reading or writing the stored charge.

Detailed Application Field Plans

The MT29F64G08AKCCBH2-10Z:C finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. 4. Automotive electronics for storing firmware, maps, and multimedia content. 5. Industrial control systems for data logging and firmware storage.

Detailed and Complete Alternative Models

1. MT29F64G08CBABA: Similar specifications with a different package type (BGA).
2. MT29F64G08EBABA: Higher endurance version with extended program/erase cycles.
3. MT29F64G08FBABA: Lower power consumption variant suitable for battery-powered devices.

These alternative models offer similar functionality and can be considered as alternatives to MT29F64G08AKCCBH2-10Z:C based on specific requirements.

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