MT29F64G08CBABAWP:B TR

Product Overview

Category

MT29F64G08CBABAWP:B TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBABAWP:B TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F64G08CBABAWP:B TR is typically packaged in a surface-mount package (SMT) and is available in various quantities depending on the manufacturer's specifications.

Essence

The essence of MT29F64G08CBABAWP:B TR lies in its ability to provide high-capacity, reliable, and fast data storage for electronic devices.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The pin configuration of MT29F64G08CBABAWP:B TR may vary depending on the specific manufacturer's design. However, a typical pin configuration includes:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output

Functional Features

• Erase and Program Operations: MT29F64G08CBABAWP:B TR supports both erase and program operations, allowing for data modification and storage.
• Block Management: It incorporates block management techniques to optimize data organization and improve performance.
• Error Correction Code (ECC): The product utilizes ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: MT29F64G08CBABAWP:B TR implements wear leveling algorithms to evenly distribute write operations across memory cells, prolonging the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick access to stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures long-term durability.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of erase/write cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory technologies.

Working Principles

MT29F64G08CBABAWP:B TR operates based on the principles of NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information through the use of charge levels. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the manipulation of charge levels within the memory cells.

Detailed Application Field Plans

MT29F64G08CBABAWP:B TR finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT29F64G08CBABAWP:B TR include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F64G08CBABA

These models provide comparable storage capacity, performance, and features, making them suitable alternatives for different applications.

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