MT29F64G08CBABAWP-IT:B

Product Overview

Category

The MT29F64G08CBABAWP-IT:B belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBABAWP-IT:B offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory chip enables high-speed data transfer, ensuring efficient performance.
• Reliable and durable: This product is designed to withstand frequent read and write operations, making it highly reliable and long-lasting.
• Low power consumption: The MT29F64G08CBABAWP-IT:B is energy-efficient, consuming minimal power during operation.

Package and Quantity

The MT29F64G08CBABAWP-IT:B is available in a compact package that ensures easy integration into electronic devices. It is typically sold in quantities of one unit per package.

Essence

As a NAND flash memory chip, the MT29F64G08CBABAWP-IT:B serves as a crucial component for storing and retrieving digital data in a wide range of electronic devices.

Specifications

• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F64G08CBABAWP-IT:B features the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines

Functional Features

• Page-level data programming and erasing: The MT29F64G08CBABAWP-IT:B allows for efficient programming and erasing of data at the page level, enabling flexible data management.
• Error correction code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability during read and write operations.
• Wear leveling: The NAND flash memory chip employs wear leveling techniques to distribute data evenly across memory blocks, extending its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures efficient performance.
• Reliable and durable design withstands frequent read and write operations.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited erase/program cycles may affect long-term durability.
• Higher cost compared to other types of memory chips.

Working Principles

The MT29F64G08CBABAWP-IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electrical charges within their floating gates. When reading data, the charge level is detected, allowing retrieval of stored information. During programming or erasing, the trapped charges are manipulated to represent new data or erase existing data.

Detailed Application Field Plans

The MT29F64G08CBABAWP-IT:B finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F64G08CBABAWP-IT:C
2. MT29F64G08CBABAWP-IT:D
3. MT29F64G08CBABAWP-IT:E
4. MT29F64G08CBABAWP-IT:F

These alternative models offer similar specifications and functionality to the MT29F64G08CBABAWP-IT:B, providing users with a range of options for their specific requirements.

In conclusion, the MT29F64G08CBABAWP-IT:B is a high-capacity NAND flash memory chip that offers fast data transfer, reliability, and low power consumption. It finds widespread use in various electronic devices and provides an essential solution for efficient data storage and retrieval.