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MT46V16M16TG-75 L:F TR

MT46V16M16TG-75 L:F TR

Product Overview

Category

The MT46V16M16TG-75 L:F TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

  • High-speed data access: The MT46V16M16TG-75 L:F TR offers fast read and write speeds, enabling efficient data processing.
  • Large storage capacity: With a capacity of 16 megabits, this DRAM chip can store a significant amount of data.
  • Low power consumption: This product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: The MT46V16M16TG-75 L:F TR is available in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT46V16M16TG-75 L:F TR is typically packaged in trays or reels. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

  • Part Number: MT46V16M16TG-75 L:F TR
  • Memory Type: Dynamic Random Access Memory (DRAM)
  • Capacity: 16 Megabits
  • Operating Voltage: 2.5V
  • Speed Grade: 75
  • Package Type: Fine-pitch Ball Grid Array (FBGA)
  • Pin Count: 60 pins

Detailed Pin Configuration

The MT46V16M16TG-75 L:F TR has a total of 60 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration:

Pin Configuration Diagram

  1. VDD - Power supply voltage
  2. VSS - Ground
  3. DQ0-DQ15 - Data input/output pins
  4. WE - Write enable
  5. CAS - Column address strobe
  6. RAS - Row address strobe
  7. CS - Chip select
  8. CLK - Clock input

Note: The pin configuration may vary depending on the manufacturer's specifications.

Functional Features

  • High-speed data transfer: The MT46V16M16TG-75 L:F TR supports fast data transfer rates, allowing for efficient data processing.
  • Refresh mechanism: This DRAM chip incorporates a refresh mechanism to maintain data integrity over time.
  • Easy integration: The compact package and standardized pin configuration make it easy to integrate this chip into various electronic devices.

Advantages and Disadvantages

Advantages

  • High-speed data access enables faster processing.
  • Large storage capacity accommodates a significant amount of data.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package facilitates integration into small form factor devices.

Disadvantages

  • Susceptible to data loss if power is interrupted.
  • Requires periodic refreshing to maintain data integrity.
  • Relatively higher cost compared to other memory technologies.

Working Principles

The MT46V16M16TG-75 L:F TR operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within the memory cells. To read or write data, the chip activates specific rows and columns by applying appropriate voltage signals to the corresponding control pins. The stored charge in the capacitors represents the binary data, which can be accessed and manipulated by the connected device.

Detailed Application Field Plans

The MT46V16M16TG-75 L:F TR is widely used in various electronic devices that require high-speed data storage and retrieval. Some common application fields include:

  1. Personal Computers (PCs): Used as main memory modules in desktop and laptop computers.
  2. Mobile Devices: Integrated into smartphones and tablets to provide fast data access for applications and operating systems.
  3. Networking Equipment: Utilized in routers, switches, and servers to store routing tables and buffer data packets.
  4. Consumer Electronics: Found in gaming consoles, digital cameras, and multimedia devices for efficient data handling.

Detailed and Complete Alternative Models

  1. MT46V16M16P-6T IT:F - Similar DRAM chip with a lower speed grade of 6 and an industrial temperature range.
  2. MT46V16M16TG-5B IT:K - Another variant with a higher speed grade of 5 and an extended temperature range.
  3. MT46V16M16TG-75 L:A TR - A comparable model with the same speed grade but a different package type (TSOP).

These alternative models offer similar functionality and can be considered as substitutes based on specific requirements and compatibility considerations.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT46V16M16TG-75 L:F TR dalam penyelesaian teknikal

  1. Question: What is the voltage range for MT46V16M16TG-75 L:F TR?
    Answer: The voltage range for MT46V16M16TG-75 L:F TR is 2.5V to 3.3V.

  2. Question: What is the capacity of MT46V16M16TG-75 L:F TR?
    Answer: MT46V16M16TG-75 L:F TR has a capacity of 256 Megabit (16 Meg x 16).

  3. Question: What is the operating temperature range for MT46V16M16TG-75 L:F TR?
    Answer: The operating temperature range for MT46V16M16TG-75 L:F TR is -40°C to +85°C.

  4. Question: Is MT46V16M16TG-75 L:F TR compatible with DDR2 memory interface?
    Answer: Yes, MT46V16M16TG-75 L:F TR is compatible with DDR2 memory interface.

  5. Question: What is the clock frequency supported by MT46V16M16TG-75 L:F TR?
    Answer: MT46V16M16TG-75 L:F TR supports a clock frequency of up to 400 MHz.

  6. Question: Does MT46V16M16TG-75 L:F TR support burst mode operation?
    Answer: Yes, MT46V16M16TG-75 L:F TR supports burst mode operation.

  7. Question: Can MT46V16M16TG-75 L:F TR be used in automotive applications?
    Answer: Yes, MT46V16M16TG-75 L:F TR is suitable for automotive applications.

  8. Question: What is the package type for MT46V16M16TG-75 L:F TR?
    Answer: MT46V16M16TG-75 L:F TR is available in a 60-ball FBGA package.

  9. Question: Does MT46V16M16TG-75 L:F TR have built-in ECC (Error Correction Code)?
    Answer: No, MT46V16M16TG-75 L:F TR does not have built-in ECC.

  10. Question: Is MT46V16M16TG-75 L:F TR RoHS compliant?
    Answer: Yes, MT46V16M16TG-75 L:F TR is RoHS (Restriction of Hazardous Substances) compliant.