MT47H128M4CB-37E:B TR

Product Overview

Category

MT47H128M4CB-37E:B TR belongs to the category of semiconductor memory products.

Use

It is primarily used as a memory component in electronic devices and systems.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package size

Package

MT47H128M4CB-37E:B TR is available in a compact and standardized package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT47H128M4CB-37E:B TR is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Model: MT47H128M4CB-37E:B TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Speed: 37E (DDR3-1866)
• Organization: 4 banks x 8 Meg x 4
• Voltage: 1.5V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H128M4CB-37E:B TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. ODT
48. RESET#
49. VDD
50. VDD

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Easy integration with various systems and platforms

Advantages

• Fast and efficient data processing
• Large storage capacity for complex applications
• Low power consumption for energy-efficient devices
• Reliable data retention for long-term usage
• Compatibility with industry-standard interfaces and protocols

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity
• Sensitivity to electrical noise and interference

Working Principles

MT47H128M4CB-37E:B TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers and employs a capacitor-based storage cell design to store binary information.

Detailed Application Field Plans

MT47H128M4CB-37E:B TR finds extensive use in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Consumer electronics - Automotive applications - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality and specifications to MT47H128M4CB-37E:B TR include: - MT47H64M16HR-25E IT:H - MT47H256M8EB-25E:C - MT47H512M8HQ-3:G - MT47H1G8DM-25E:A

These alternative models can be considered based on specific requirements and compatibility with the target system.

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