Micron Technology Inc.
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MT47H128M4CB-5E:B
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MT47H128M4CB-5E:B

Product Overview

Category

MT47H128M4CB-5E:B belongs to the category of semiconductor memory products.

Use

This product is primarily used as a high-density synchronous dynamic random-access memory (SDRAM) module.

Characteristics

  • High density: The MT47H128M4CB-5E:B offers a large storage capacity, making it suitable for applications that require extensive data storage.
  • Synchronous operation: It operates synchronously with the system clock, allowing for efficient data transfer and processing.
  • Fast data access: The MT47H128M4CB-5E:B provides quick access to stored data, enabling rapid retrieval and manipulation.
  • Low power consumption: This product is designed to minimize power consumption, making it energy-efficient.
  • Reliable performance: It offers reliable performance, ensuring data integrity and system stability.

Package and Quantity

The MT47H128M4CB-5E:B is available in a compact and standardized package. The specific package type may vary depending on the manufacturer. It is typically sold individually or in bulk quantities, catering to different customer requirements.

Specifications

  • Memory Type: SDRAM
  • Capacity: 128 Megabytes (MB)
  • Organization: 4 Megabits x 4 banks x 8 bits
  • Voltage Supply: 2.5 Volts (V)
  • Speed Grade: -5E:B
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Ball Grid Array (BGA)
  • Pin Count: 90 pins

Detailed Pin Configuration

The MT47H128M4CB-5E:B has a total of 90 pins. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. CKE
  45. CK
  46. VSS
  47. DQM0
  48. DQM1
  49. VREF
  50. VSS
  51. DM0
  52. DM1
  53. VSS
  54. VDD
  55. VDD
  56. VSS
  57. VSS
  58. VSS
  59. VSS
  60. VSS
  61. VSS
  62. VSS
  63. VSS
  64. VSS
  65. VSS
  66. VSS
  67. VSS
  68. VSS
  69. VSS
  70. VSS
  71. VSS
  72. VSS
  73. VSS
  74. VSS
  75. VSS
  76. VSS
  77. VSS
  78. VSS
  79. VSS
  80. VSS
  81. VSS
  82. VSS
  83. VSS
  84. VSS
  85. VSS
  86. VSS
  87. VSS
  88. VSS
  89. VSS
  90. VSS

Functional Features

  • Burst Mode: The MT47H128M4CB-5E:B supports burst mode operation, allowing for efficient data transfer.
  • Auto Refresh: It features an auto-refresh function that automatically refreshes the stored data at regular intervals, ensuring data integrity.
  • Precharge Power Down: This product supports precharge power down, reducing power consumption during idle periods.
  • On-Die Termination (ODT): The MT47H128M4CB-5E:B incorporates on-die termination, improving signal integrity and reducing noise.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data access
  • Low power consumption
  • Reliable performance
  • Efficient burst mode operation
  • Auto-refresh function for data integrity
  • Precharge power down for reduced power consumption
  • On-die termination for improved

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT47H128M4CB-5E:B dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of MT47H128M4CB-5E:B in technical solutions:

  1. Question: What is the capacity of the MT47H128M4CB-5E:B memory module?
    Answer: The MT47H128M4CB-5E:B has a capacity of 128 megabytes (MB).

  2. Question: What is the speed rating of the MT47H128M4CB-5E:B memory module?
    Answer: The MT47H128M4CB-5E:B has a speed rating of 5E, which corresponds to a clock frequency of 400 MHz.

  3. Question: What type of memory technology does the MT47H128M4CB-5E:B use?
    Answer: The MT47H128M4CB-5E:B uses DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) technology.

  4. Question: Can the MT47H128M4CB-5E:B be used in laptops or desktop computers?
    Answer: Yes, the MT47H128M4CB-5E:B can be used in both laptops and desktop computers, as long as they support DDR3 memory.

  5. Question: What is the operating voltage of the MT47H128M4CB-5E:B memory module?
    Answer: The MT47H128M4CB-5E:B operates at a voltage of 1.5 volts.

  6. Question: Is the MT47H128M4CB-5E:B compatible with other DDR3 memory modules?
    Answer: Yes, the MT47H128M4CB-5E:B is compatible with other DDR3 memory modules as long as they have the same specifications.

  7. Question: Can the MT47H128M4CB-5E:B be used in server applications?
    Answer: Yes, the MT47H128M4CB-5E:B can be used in server applications that require DDR3 memory.

  8. Question: What is the form factor of the MT47H128M4CB-5E:B memory module?
    Answer: The MT47H128M4CB-5E:B has a small outline dual in-line memory module (SO-DIMM) form factor.

  9. Question: Does the MT47H128M4CB-5E:B support error correction code (ECC)?
    Answer: No, the MT47H128M4CB-5E:B does not support ECC. It is a non-ECC memory module.

  10. Question: Can the MT47H128M4CB-5E:B be overclocked for higher performance?
    Answer: Overclocking is not recommended as it may void the warranty and can potentially cause stability issues.