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MT47H128M8JN-25E:H

MT47H128M8JN-25E:H

Product Overview

Category

MT47H128M8JN-25E:H belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Package

MT47H128M8JN-25E:H is available in a compact and durable package that ensures protection against external factors such as moisture and physical damage.

Essence

The essence of MT47H128M8JN-25E:H lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of MT47H128M8JN-25E:H units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: MT47H128M8JN-25E:H
  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Capacity: 128 Megabits (16 Megabytes)
  • Speed Grade: 25E
  • Operating Voltage: 2.5V
  • Organization: 128M words x 8 bits
  • Interface: Parallel
  • Clock Frequency: Up to 400 MHz
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H128M8JN-25E:H is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDD
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VDD
  38. /WE
  39. /CAS
  40. /RAS
  41. /CS
  42. /CKE
  43. /BA0
  44. /BA1
  45. VSS
  46. /LDQM
  47. /UDQM
  48. /RESET

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Programmable CAS latency
  • Low-power standby mode

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Reliable performance
  • Flexible configuration options

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited endurance in terms of write cycles

Working Principles

MT47H128M8JN-25E:H operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information can be accessed and modified by sending appropriate signals through the pins of the device.

Detailed Application Field Plans

MT47H128M8JN-25E:H finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H128M8JN-25E:H are: - MT47H64M16HR-25E:H - MT47H256M8EB-25E:H - MT47H512M4EB-25E:H - MT47H1G8FB-25E:H

These models offer similar functionality and characteristics, but with varying capacities and configurations.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT47H128M8JN-25E:H dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of MT47H128M8JN-25E:H in technical solutions:

  1. Question: What is the maximum operating frequency of MT47H128M8JN-25E:H?
    Answer: The maximum operating frequency of MT47H128M8JN-25E:H is 800 MHz.

  2. Question: What is the capacity of MT47H128M8JN-25E:H?
    Answer: MT47H128M8JN-25E:H has a capacity of 1 GB (gigabyte).

  3. Question: What is the voltage supply range for MT47H128M8JN-25E:H?
    Answer: The voltage supply range for MT47H128M8JN-25E:H is 2.375V to 2.625V.

  4. Question: Is MT47H128M8JN-25E:H compatible with DDR3 memory interfaces?
    Answer: Yes, MT47H128M8JN-25E:H is compatible with DDR3 memory interfaces.

  5. Question: Can MT47H128M8JN-25E:H be used in industrial applications?
    Answer: Yes, MT47H128M8JN-25E:H is suitable for use in industrial applications.

  6. Question: What is the operating temperature range for MT47H128M8JN-25E:H?
    Answer: The operating temperature range for MT47H128M8JN-25E:H is -40°C to +95°C.

  7. Question: Does MT47H128M8JN-25E:H support ECC (Error Correction Code)?
    Answer: No, MT47H128M8JN-25E:H does not support ECC.

  8. Question: Can MT47H128M8JN-25E:H be used in automotive applications?
    Answer: Yes, MT47H128M8JN-25E:H is suitable for use in automotive applications.

  9. Question: What is the package type of MT47H128M8JN-25E:H?
    Answer: MT47H128M8JN-25E:H comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package.

  10. Question: Is MT47H128M8JN-25E:H RoHS (Restriction of Hazardous Substances) compliant?
    Answer: Yes, MT47H128M8JN-25E:H is RoHS compliant, ensuring it meets environmental standards.

Please note that these answers are based on general information about MT47H128M8JN-25E:H and may vary depending on specific technical requirements and application scenarios.