Micron Technology Inc.
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MT47H16M16BG-5E:B TR
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MT47H16M16BG-5E:B TR

Product Overview

Category

MT47H16M16BG-5E:B TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly.

Characteristics

  • High-speed data access
  • Volatile memory
  • Requires periodic refreshing
  • Large storage capacity
  • Compact size

Package

MT47H16M16BG-5E:B TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

MT47H16M16BG-5E:B TR is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 1 Gigabit (16 Megabytes)
  • Organization: 16 Meg x 16
  • Speed: 5E (800 MHz)
  • Voltage: 1.5V
  • Operating Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT47H16M16BG-5E:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A10
  21. A9
  22. A11
  23. BA0
  24. BA1
  25. A0
  26. A1
  27. A2
  28. A3
  29. A4
  30. A5
  31. A6
  32. A7
  33. A8
  34. VSS
  35. WE#
  36. CAS#
  37. RAS#
  38. CS#
  39. CKE
  40. CK

Functional Features

  • High-speed data transfer rate
  • Low power consumption
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operation for efficient data access

Advantages

  • Fast data access speed enhances overall system performance
  • Large storage capacity allows for handling complex tasks and applications
  • Low power consumption helps in reducing energy usage
  • ODT improves signal quality, reducing noise and errors
  • Burst mode operation optimizes data transfer efficiency

Disadvantages

  • Volatile memory requires constant power supply to retain data
  • Relatively higher cost compared to other memory technologies
  • Limited lifespan due to the finite number of write cycles

Working Principles

MT47H16M16BG-5E:B TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller sends appropriate signals to access the desired data.

Detailed Application Field Plans

MT47H16M16BG-5E:B TR finds extensive application in various electronic devices and systems, including: - Laptops and notebooks - Desktop computers - Servers - Gaming consoles - Networking equipment - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to MT47H16M16BG-5E:B TR include: - MT47H16M16BG-5E:A TR - MT47H16M16BG-5E:C TR - MT47H16M16BG-5E:D TR - MT47H16M16BG-5E:E TR

These models offer similar specifications and functionality, providing flexibility in choosing the appropriate memory module for specific requirements.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT47H16M16BG-5E:B TR dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of MT47H16M16BG-5E:B TR in technical solutions:

  1. Q: What is the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR is a specific model of DDR3 SDRAM memory module.

  2. Q: What is the capacity of the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR has a capacity of 1 gigabit (Gb) per chip, and there are 16 chips on the module, resulting in a total capacity of 16 gigabits (Gb) or 2 gigabytes (GB).

  3. Q: What is the speed rating of the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR has a speed rating of 5E, which corresponds to a clock frequency of 800 MHz.

  4. Q: What is the operating voltage of the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR operates at a voltage of 1.5 volts (V).

  5. Q: Can the MT47H16M16BG-5E:B TR be used in laptops or desktop computers? A: Yes, the MT47H16M16BG-5E:B TR can be used in both laptops and desktop computers that support DDR3 memory.

  6. Q: Is the MT47H16M16BG-5E:B TR compatible with other DDR3 memory modules? A: Yes, the MT47H16M16BG-5E:B TR is compatible with other DDR3 memory modules as long as they have the same speed rating and voltage requirements.

  7. Q: What are some typical applications for the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR is commonly used in various technical solutions such as servers, workstations, networking equipment, and embedded systems.

  8. Q: Can the MT47H16M16BG-5E:B TR be overclocked? A: Overclocking is not recommended for the MT47H16M16BG-5E:B TR as it may lead to instability or damage to the module.

  9. Q: Does the MT47H16M16BG-5E:B TR support error correction (ECC)? A: No, the MT47H16M16BG-5E:B TR does not support ECC. It is a non-ECC memory module.

  10. Q: Where can I purchase the MT47H16M16BG-5E:B TR? A: The MT47H16M16BG-5E:B TR can be purchased from authorized distributors or online retailers that specialize in electronic components.