MT52L512M32D2PF-093 WT ES:B TR

Basic Information Overview

• Category: Memory Chip
• Use: Storage and retrieval of digital data in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Model: MT52L512M32D2PF-093 WT ES:B TR
• Capacity: 512 megabits (64 megabytes)
• Organization: 32M words x 16 bits x 2 banks
• Voltage Supply: 1.7V - 1.95V
• Operating Temperature Range: -40°C to +85°C
• Interface: Double Data Rate 2 (DDR2)
• Clock Frequency: 400 MHz
• Data Transfer Rate: 800 Mbps
• Burst Length: 4 or 8

Detailed Pin Configuration

The MT52L512M32D2PF-093 WT ES:B TR chip has a total of 90 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3 | DQ0 | Data Input/Output Bit 0 | | 4 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 89 | DQ31 | Data Input/Output Bit 31 | | 90 | NC | No Connection |

Functional Features

• High-speed data transfer for efficient read/write operations
• Low power consumption for extended battery life in portable devices
• Non-volatile memory ensures data retention even when power is lost
• Wide operating temperature range allows usage in various environments
• BGA package provides reliable electrical connections and compact size

Advantages

• Large storage capacity enables handling of extensive data
• Fast data transfer rate enhances overall system performance
• Low power consumption reduces energy usage and extends device battery life
• Non-volatile memory ensures data integrity and reliability
• Wide operating temperature range allows usage in extreme conditions

Disadvantages

• BGA package may require specialized equipment for installation or replacement
• Limited compatibility with older devices that do not support DDR2 interface
• Higher cost compared to lower-capacity memory chips

Working Principles

The MT52L512M32D2PF-093 WT ES:B TR chip utilizes DDR2 interface technology to enable high-speed data transfer between the memory chip and the host device. It stores digital data in non-volatile memory cells, which retain information even when power is disconnected. The chip operates at a specified voltage supply and clock frequency, allowing for efficient read and write operations.

Detailed Application Field Plans

The MT52L512M32D2PF-093 WT ES:B TR chip finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Personal computers and laptops 3. Gaming consoles 4. Digital cameras 5. Networking equipment 6. Automotive electronics 7. Industrial control systems

Detailed and Complete Alternative Models

1. MT52L256M32D2PF-093 WT ES:B TR - 256 megabits capacity, same specifications as MT52L512M32D2PF-093 WT ES:B TR
2. MT52L1024M32D2PF-093 WT ES:B TR - 1024 megabits capacity, same specifications as MT52L512M32D2PF-093 WT ES:B TR
3. MT52L512M16D2PF-093 WT ES:B TR - 512 megabits capacity, 16-bit organization, same specifications as MT52L512M32D2PF-093 WT ES:B TR

(Note: The above alternative models are for illustrative purposes only and may not represent the complete range of available alternatives.)

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