MTFC4GMVEA-1M WT

Product Overview

Category

MTFC4GMVEA-1M WT belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer rate
• Large storage capacity
• Compact size
• Low power consumption
• Durable and reliable

Package

MTFC4GMVEA-1M WT is packaged in a small form factor, typically in a surface-mount package (SMP) or ball grid array (BGA) package.

Essence

The essence of MTFC4GMVEA-1M WT lies in its ability to store and retrieve digital data quickly and efficiently.

Packaging/Quantity

This product is usually sold in bulk packaging, with quantities varying depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 4GB
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -25°C to 85°C
• Read Speed: Up to 550MB/s
• Write Speed: Up to 520MB/s

Detailed Pin Configuration

The pin configuration of MTFC4GMVEA-1M WT may vary depending on the specific package and manufacturer. However, a typical pin configuration includes:

• VCC: Power supply voltage
• GND: Ground
• CE: Chip enable
• R/B#: Ready/busy signal
• CLE: Command latch enable
• ALE: Address latch enable
• WE#: Write enable
• RE#: Read enable
• DQ[0-7]: Data input/output lines
• WP#: Write protect

Functional Features

• High-speed data transfer: MTFC4GMVEA-1M WT offers fast read and write speeds, allowing for quick access to stored data.
• Error correction: This product incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The NAND flash memory controller implements wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: MTFC4GMVEA-1M WT includes mechanisms to identify and manage defective memory blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity: With 4GB of storage, this product can accommodate a significant amount of data.
• High-speed data transfer: The fast read and write speeds enable efficient data handling.
• Compact size: The small form factor allows for easy integration into various electronic devices.
• Low power consumption: MTFC4GMVEA-1M WT consumes minimal power, contributing to longer battery life in portable devices.

Disadvantages

• Limited storage capacity: While 4GB is sufficient for many applications, it may not meet the requirements of certain high-capacity storage needs.
• Endurance limitations: Like all NAND flash memory, MTFC4GMVEA-1M WT has a limited number of program/erase cycles before it may become unreliable.

Working Principles

MTFC4GMVEA-1M WT utilizes NAND flash memory technology. It stores data by trapping electric charges within memory cells, which are organized in a grid-like structure. These charges represent binary information (0s and 1s). When reading data, the controller retrieves the stored charges and interprets them as digital information. During writing, the controller applies voltage to specific memory cells to modify the charge levels, thereby changing the stored data.

Detailed Application Field Plans

MTFC4GMVEA-1M WT finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MTFC4GMVEA-1M WT include: - MTFC8GLVEA-2M WT: 8GB storage capacity, similar specifications - MTFC16GMVEA-3M WT: 16GB storage capacity, similar specifications - MTFC32GLVEA-4M WT: 32GB storage capacity, similar specifications

These alternative models offer increased storage capacity while maintaining comparable performance characteristics.

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