Microsemi Corporation
Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
APT30M19JVFR
Lihat Butiran Helaian data

APT30M19JVFR

Product Overview

Category:

The APT30M19JVFR belongs to the category of power MOSFETs.

Use:

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics:

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Enhanced body diode dV/dt and di/dt capability

Package:

The APT30M19JVFR is typically available in a TO-247 package.

Essence:

This MOSFET is designed to provide efficient and reliable power switching in demanding applications.

Packaging/Quantity:

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 190V
  • Continuous Drain Current (ID): 30A
  • RDS(ON) Max @ VGS = 10V: 0.038Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Avalanche Energy (EA): 280mJ
  • Operating Junction and Storage Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The APT30M19JVFR typically has three pins: Gate, Drain, and Source. The pin configuration is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid control of power flow.
  • Low gate charge facilitates efficient gate control and reduced drive requirements.
  • Enhanced body diode dV/dt and di/dt capability improve reliability in harsh operating conditions.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for precise power control

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability from certain suppliers

Working Principles

The APT30M19JVFR operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals. When properly biased, it can efficiently switch high currents and voltages in power circuits.

Detailed Application Field Plans

The APT30M19JVFR is commonly used in the following application fields: - Switching power supplies - Motor drives - Inverters - Power factor correction circuits - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the APT30M19JVFR include: - IRFP4668PbF - STW34NB20 - FDPF33N25T

These alternatives offer similar performance characteristics and are suitable for comparable applications.

In conclusion, the APT30M19JVFR is a high-voltage power MOSFET with excellent characteristics for efficient power switching applications. Its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models make it a versatile component in various electronic systems.

[Word Count: 497]

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi APT30M19JVFR dalam penyelesaian teknikal

  1. What is APT30M19JVFR?

    • APT30M19JVFR is a high-power, high-frequency RF power transistor designed for use in applications such as radar, industrial heating, and plasma generation.

  2. What are the key specifications of APT30M19JVFR?

    • APT30M19JVFR features a frequency range of 960-1215 MHz, a power output of 30 watts, and a voltage rating of 65 volts.

  3. What are the typical applications of APT30M19JVFR?

    • APT30M19JVFR is commonly used in radar systems, industrial heating equipment, and plasma generators.

  4. What are the thermal characteristics of APT30M19JVFR?

    • APT30M19JVFR has a maximum junction temperature of 200°C and features excellent thermal stability for reliable performance.

  5. What are the recommended operating conditions for APT30M19JVFR?

    • APT30M19JVFR operates best within a specified voltage and current range, typically around 28-32 volts and 6-8 amps.

  6. What are the key advantages of using APT30M19JVFR in technical solutions?

    • APT30M19JVFR offers high power output, wide frequency coverage, and excellent thermal stability, making it suitable for demanding RF applications.

  7. How does APT30M19JVFR compare to other RF power transistors in its class?

    • APT30M19JVFR stands out for its high power density, ruggedness, and reliability, making it a preferred choice for many technical solutions.

  8. Are there any specific considerations for integrating APT30M19JVFR into a technical solution?

    • Proper heat sinking and RF matching are crucial for maximizing the performance and longevity of APT30M19JVFR in a technical solution.

  9. What are the typical failure modes of APT30M19JVFR and how can they be mitigated?

    • Common failure modes include overvoltage, overcurrent, and thermal stress. Mitigation strategies involve implementing proper protection circuits and thermal management.

  10. Where can I find detailed application notes and support for integrating APT30M19JVFR into my technical solution?

    • Detailed application notes, datasheets, and technical support for APT30M19JVFR can be obtained from the manufacturer's website or through authorized distributors.