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JAN2N2329AU4
Product Overview
- Category: Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: High voltage, high current, low power dissipation
- Package: TO-18 metal can package
- Essence: NPN bipolar junction transistor
- Packaging/Quantity: Typically sold in reels or tubes of 100 pieces
Specifications
- Maximum Collector-Emitter Voltage: 40V
- Maximum Collector-Base Voltage: 60V
- Maximum Emitter-Base Voltage: 6V
- Collector Current - Continuous: 600mA
- Power Dissipation: 625mW
- Transition Frequency: 50MHz
- Operating Temperature: -65°C to 200°C
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High voltage capability
- Low leakage current
- Fast switching speed
- Wide operating temperature range
Advantages and Disadvantages
Advantages
- Suitable for high-speed switching applications
- Can handle relatively high currents
- Wide operating temperature range
Disadvantages
- Limited power dissipation capability
- Sensitive to overvoltage conditions
Working Principles
The JAN2N2329AU4 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans
- Audio amplification
- Signal amplification in electronic circuits
- Switching applications in electronic devices
Detailed and Complete Alternative Models
- 2N2222A
- BC337
- 2N3904
- BC547
This comprehensive entry provides a detailed overview of the JAN2N2329AU4 transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi JAN2N2329AU4 dalam penyelesaian teknikal
What is JAN2N2329AU4?
- JAN2N2329AU4 is a high-reliability, military-grade NPN bipolar junction transistor (BJT) designed for use in demanding technical applications.
What are the key specifications of JAN2N2329AU4?
- The JAN2N2329AU4 features a maximum collector-emitter voltage of 80V, a maximum collector current of 600mA, and a power dissipation of 625mW.
In what types of technical solutions is JAN2N2329AU4 commonly used?
- JAN2N2329AU4 is commonly used in aerospace, defense, and other high-reliability applications where ruggedness and performance under extreme conditions are required.
What are the temperature range and operating conditions for JAN2N2329AU4?
- JAN2N2329AU4 is designed to operate within a temperature range of -65°C to +200°C, making it suitable for harsh environmental conditions.
Can JAN2N2329AU4 be used in audio amplifier circuits?
- Yes, JAN2N2329AU4 can be utilized in audio amplifier circuits, especially in applications where reliability and ruggedness are critical.
What are the typical applications for JAN2N2329AU4 in technical solutions?
- Typical applications include switching and amplification in ruggedized electronic systems, motor control, power management, and signal processing.
Does JAN2N2329AU4 require any special handling or mounting considerations?
- Due to its military-grade nature, JAN2N2329AU4 may require specific handling procedures and ESD precautions during assembly and installation.
Are there any recommended alternative components to JAN2N2329AU4?
- While there are alternatives available, they may not offer the same level of ruggedness and reliability as JAN2N2329AU4, especially in high-stress environments.
What are the potential failure modes of JAN2N2329AU4 in technical solutions?
- Common failure modes include thermal stress, overvoltage conditions, and excessive current, which can impact the transistor's performance and longevity.
Where can I find detailed technical documentation and application notes for JAN2N2329AU4?
- Detailed technical documentation and application notes for JAN2N2329AU4 can typically be obtained from the manufacturer or distributor, providing comprehensive guidance on its usage in technical solutions.