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JANS1N4474 - Semiconductor Diode
Basic Information Overview
- Category: Semiconductor Diode
- Use: Rectification and signal demodulation
- Characteristics: High reliability, low forward voltage drop, fast switching speed
- Package: DO-41 axial leaded package
- Essence: Silicon rectifier diode
- Packaging/Quantity: Typically available in reels of 500 or 1000 units
Specifications
- Forward Voltage Drop: 0.7V maximum at 1A
- Reverse Voltage: 50V
- Average Rectified Current: 1A
- Peak Surge Current: 30A
- Operating Temperature Range: -65°C to +175°C
Detailed Pin Configuration
The JANS1N4474 is a two-terminal device with an anode and a cathode. In the DO-41 package, the anode is denoted by a band around one end of the diode.
Functional Features
- High reliability due to its construction using military-grade materials and processes
- Low forward voltage drop ensures minimal power loss
- Fast switching speed allows for efficient signal demodulation
Advantages and Disadvantages
Advantages
- High reliability makes it suitable for critical applications
- Low forward voltage drop reduces power dissipation
- Fast switching speed enables quick response in signal demodulation
Disadvantages
- Relatively higher cost compared to standard commercial diodes
- Limited availability due to its specialized nature
Working Principles
The JANS1N4474 operates based on the principle of semiconductor rectification, allowing current flow in only one direction when a sufficient forward voltage is applied. This property makes it ideal for use in rectification and signal demodulation circuits.
Detailed Application Field Plans
The JANS1N4474 is commonly used in aerospace, defense, and other high-reliability applications where consistent performance under extreme conditions is essential. It is also employed in precision instrumentation and communication equipment.
Detailed and Complete Alternative Models
- JANS1N4473: Lower reverse voltage (30V) version of the JANS1N4474
- JANS1N4475: Higher reverse voltage (75V) version of the JANS1N4474
- JANS1N4476: Higher reverse voltage (100V) version of the JANS1N4474
This completes the entry for the JANS1N4474 semiconductor diode, covering its product details, specifications, features, and applications.
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What is the JANS1N4474?
- The JANS1N4474 is a high-reliability, military-grade silicon power rectifier diode designed for demanding applications.
What are the key features of the JANS1N4474?
- The JANS1N4474 features high surge current capability, low forward voltage drop, and high reliability under harsh operating conditions.
What are the typical applications of the JANS1N4474?
- The JANS1N4474 is commonly used in aerospace, defense, and other high-reliability applications where ruggedness and long-term stability are essential.
What is the maximum forward voltage of the JANS1N4474?
- The maximum forward voltage of the JANS1N4474 is typically around 1.1 volts at a forward current of 10A.
What is the maximum reverse voltage of the JANS1N4474?
- The JANS1N4474 has a maximum reverse voltage rating of 200 volts.
What is the operating temperature range of the JANS1N4474?
- The JANS1N4474 is designed to operate within a wide temperature range, typically from -65°C to 175°C.
Is the JANS1N4474 suitable for high-frequency applications?
- While the JANS1N4474 can handle moderate frequencies, it is primarily designed for use in low to moderate frequency applications.
Does the JANS1N4474 require heatsinking?
- Heatsinking may be necessary depending on the application and the power dissipation requirements. Consult the datasheet for specific guidance.
What are the packaging options available for the JANS1N4474?
- The JANS1N4474 is available in various package types, including DO-203AB (DO-5) and other military-standard packages.
Is the JANS1N4474 compliant with any industry standards?
- Yes, the JANS1N4474 is compliant with MIL-PRF-19500/477, making it suitable for military and aerospace applications requiring high reliability and performance standards.