PBSS5160V,115

Product Category: Transistor

Basic Information Overview: - Category: NPN Bipolar Power Transistor - Use: Amplification and switching applications - Characteristics: High current capability, low VCE(sat), and high switching speed - Package: SOT457 (SC-74) - Essence: Small signal transistor with high power dissipation capability - Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications: - Collector-Emitter Voltage (VCEO): 60V - Collector Current (IC): 1A - Power Dissipation (Ptot): 1.25W - Transition Frequency (ft): 150MHz - Hfe (Min/Max): 100/400

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High current gain - Low saturation voltage - Fast switching speed - Low equivalent series resistance

Advantages: - Suitable for high-speed switching applications - Compact package size - Low power dissipation

Disadvantages: - Limited maximum collector current compared to other power transistors - Sensitivity to overvoltage conditions

Working Principles: The PBSS5160V,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Switching power supplies - LED lighting - Motor control - Audio amplifiers

Detailed and Complete Alternative Models: - PBSS4160V,115 - PBSS3160V,115 - PBSS2160V,115

This comprehensive range of alternative models provides flexibility in design and application, catering to various current and voltage requirements.

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