PDTA123JMB,315

Product Overview

Use

It is commonly used in low-power amplification and switching applications.

Characteristics

Small size
Low power consumption
High gain

Package

The PDTA123JMB,315 comes in a SOT-23 package.

Essence

This transistor is essential for amplifying and switching low-power signals.

Packaging/Quantity

It is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

Collector-Base Voltage (VCBO): 50V
Collector-Emitter Voltage (VCEO): 50V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 100mA
Total Power Dissipation: 250mW

Detailed Pin Configuration

The pin configuration of PDTA123JMB,315 is as follows: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

High voltage capability
Low collector-emitter saturation voltage
Fast switching speed

Advantages

Small form factor
Low power consumption
Versatile application range

Disadvantages

Limited current and power handling capabilities
Susceptible to thermal issues due to small size

Working Principles

PDTA123JMB,315 operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the input signal at the base terminal, allowing amplification or switching of the output signal between the collector and emitter terminals.

Detailed Application Field Plans

PDTA123JMB,315 finds extensive use in various low-power electronic circuits, including: - Audio amplifiers - Signal amplification in sensor circuits - Switching applications in logic circuits

Detailed and Complete Alternative Models

Some alternative models to PDTA123JMB,315 include: - BC547 - 2N3904 - 2SC945

In conclusion, PDTA123JMB,315 is a small signal transistor with versatile applications in low-power amplification and switching circuits. Its compact size and low power consumption make it suitable for various electronic designs, although its limitations in current and power handling should be considered when selecting this component for specific applications.

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What is PDTA123JMB,315?
- PDTA123JMB,315 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
What are the key features of PDTA123JMB,315?
- The key features include high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.
What are the typical applications of PDTA123JMB,315?
- Typical applications include audio amplification, signal processing, sensor interfaces, and low-power switching circuits.
What is the maximum collector current of PDTA123JMB,315?
- The maximum collector current is 100mA, which makes it suitable for low to medium power applications.
What is the voltage rating of PDTA123JMB,315?
- The device has a maximum collector-emitter voltage of 50V, making it suitable for low-voltage applications.
Is PDTA123JMB,315 suitable for surface mount technology (SMT) applications?
- Yes, PDTA123JMB,315 is available in a SOT-416 package, making it suitable for compact SMT designs.
What are the thermal characteristics of PDTA123JMB,315?
- The device has low thermal resistance and is designed for efficient heat dissipation in various technical solutions.
Can PDTA123JMB,315 be used in high-frequency applications?
- Yes, the high transition frequency of the transistor makes it suitable for high-frequency applications such as RF amplification.
Are there any recommended operating conditions for PDTA123JMB,315?
- It is recommended to operate the device within the specified temperature and current limits for optimal performance and reliability.
Where can I find detailed specifications and application notes for PDTA123JMB,315?
- Detailed specifications and application notes can be found in the product datasheet provided by the manufacturer or distributor.