PSMN2R4-30YLDX

Product Overview

Use

It is commonly used in applications requiring high power switching and efficient energy management.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Enhanced thermal performance

Package

The PSMN2R4-30YLDX is typically available in a TO-220 package.

Essence

This MOSFET is essential for power electronics and control systems, providing efficient power handling capabilities.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 100A
RDS(ON) (Max) @ VGS = 10V: 2.4mΩ
Gate-Source Voltage (VGS) ±20V

Detailed Pin Configuration

The PSMN2R4-30YLDX has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Low gate charge
Avalanche energy specified
Logic level compatible

Advantages and Disadvantages

Advantages

High efficiency
Low power dissipation
Fast switching times

Disadvantages

Sensitivity to overvoltage conditions
Higher cost compared to standard MOSFETs

Working Principles

The PSMN2R4-30YLDX operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The PSMN2R4-30YLDX is widely used in various applications, including: - Switched-mode power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the PSMN2R4-30YLDX include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the PSMN2R4-30YLDX is a versatile power MOSFET with high voltage capability and fast switching characteristics, making it suitable for a wide range of power management applications.

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