Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
BUK754R7-60E,127

BUK754R7-60E,127

Product Overview

Category

The BUK754R7-60E,127 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The BUK754R7-60E,127 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes and is available in quantities suitable for both prototyping and production.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 75A
  • On-Resistance (RDS(on)): 8.5 mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The BUK754R7-60E,127 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Reliable performance under varying conditions

Disadvantages

  • May require careful handling due to its high power capabilities
  • Sensitive to static electricity and voltage spikes

Working Principles

The BUK754R7-60E,127 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting applications - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to BUK754R7-60E,127 include: - IRF3205 - FDP8870 - STP80NF70

In conclusion, the BUK754R7-60E,127 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component in various electronic applications requiring efficient power management.

[Word count: 331]

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi BUK754R7-60E,127 dalam penyelesaian teknikal

  1. What is the maximum voltage rating of BUK754R7-60E,127?

    • The maximum voltage rating of BUK754R7-60E,127 is 60V.
  2. What is the maximum current rating of BUK754R7-60E,127?

    • The maximum current rating of BUK754R7-60E,127 is typically around 75A.
  3. What type of load can BUK754R7-60E,127 handle?

    • BUK754R7-60E,127 is suitable for handling resistive, inductive, and capacitive loads.
  4. What are the typical applications of BUK754R7-60E,127?

    • BUK754R7-60E,127 is commonly used in automotive systems, motor control, power management, and industrial applications.
  5. What is the on-state resistance of BUK754R7-60E,127?

    • The on-state resistance of BUK754R7-60E,127 is typically low, around a few milliohms.
  6. Does BUK754R7-60E,127 require a heat sink for operation?

    • Depending on the application and operating conditions, a heat sink may be required to ensure proper thermal management.
  7. What is the maximum junction temperature of BUK754R7-60E,127?

    • The maximum junction temperature of BUK754R7-60E,127 is typically around 175°C.
  8. Is BUK754R7-60E,127 suitable for PWM (Pulse Width Modulation) applications?

    • Yes, BUK754R7-60E,127 is suitable for PWM applications due to its fast switching capability.
  9. What protection features does BUK754R7-60E,127 offer?

    • BUK754R7-60E,127 typically offers overcurrent protection, thermal shutdown, and ESD (Electrostatic Discharge) protection.
  10. Can BUK754R7-60E,127 be used in parallel to increase current handling capacity?

    • Yes, BUK754R7-60E,127 can be used in parallel to increase current handling capacity, but proper current sharing techniques should be employed.