MRF6S19200HSR5
Introduction
The MRF6S19200HSR5 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Basic Information Overview
- Category: RF Transistor
- Use: Power amplification in RF applications
- Characteristics: High power, high frequency operation
- Package: Surface Mount
- Essence: Amplifying RF signals
- Packaging/Quantity: Typically supplied in reels or tubes
Specifications
- Frequency Range: 1805-1990 MHz
- Power Output: 26 W
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Gain: 14 dB
- Package / Case: NI-1230H
Detailed Pin Configuration
The MRF6S19200HSR5 features a 3-pin configuration: 1. Pin 1: Source 2. Pin 2: Gate 3. Pin 3: Drain
Functional Features
- High power gain
- Broadband performance
- High efficiency
Advantages and Disadvantages
Advantages
- High power output
- Wide frequency range
- Surface mount package for easy integration
Disadvantages
- Limited voltage breakdown
- May require additional heat dissipation measures at high power levels
Working Principles
The MRF6S19200HSR5 operates on the principle of amplifying RF signals by controlling the flow of current between the source and drain terminals through the gate terminal.
Detailed Application Field Plans
The MRF6S19200HSR5 is suitable for use in the following applications: - Cellular base stations - Wireless infrastructure - Radar systems - Industrial, scientific, and medical (ISM) applications
Detailed and Complete Alternative Models
Some alternative models to the MRF6S19200HSR5 include: - MRF6S19140H - MRF6S19140HSR5 - MRF6S19140HR5
In conclusion, the MRF6S19200HSR5 is a high-power RF transistor with broad applicability in RF power amplification. Its high power output, wide frequency range, and surface mount package make it a versatile choice for various RF applications.
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What is the MRF6S19200HSR5?
- The MRF6S19200HSR5 is a high-power RF transistor designed for use in applications such as base stations, broadcast transmitters, and industrial, scientific, and medical (ISM) equipment.
What is the maximum power output of the MRF6S19200HSR5?
- The MRF6S19200HSR5 can deliver a maximum power output of 200 watts.
What frequency range does the MRF6S19200HSR5 cover?
- This transistor covers a frequency range of 1805-1990 MHz.
What are the key features of the MRF6S19200HSR5?
- Some key features include high power gain, high efficiency, and excellent linearity.
What are the typical applications of the MRF6S19200HSR5?
- Typical applications include cellular base station amplifiers, broadcast transmitters, and ISM equipment.
What is the recommended operating voltage for the MRF6S19200HSR5?
- The recommended operating voltage is typically around 28 volts.
Does the MRF6S19200HSR5 require any special heat dissipation measures?
- Yes, due to its high power capabilities, proper heat sinking and thermal management are essential for optimal performance and reliability.
What are the typical input and output impedance values for the MRF6S19200HSR5?
- The typical input and output impedance values are 50 ohms.
Is the MRF6S19200HSR5 suitable for linear or nonlinear amplifier applications?
- The MRF6S19200HSR5 is suitable for both linear and nonlinear amplifier applications.
Are there any specific precautions to consider when integrating the MRF6S19200HSR5 into a technical solution?
- It's important to ensure proper matching of impedances, adequate cooling, and adherence to manufacturer's guidelines for safe and efficient operation.