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PHB23NQ10LT,118
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PHB23NQ10LT,118

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed
  • Package: TO-263
  • Essence: Efficient power management
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 23A
  • RDS(ON): 10mΩ
  • Gate Charge (Qg): 28nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • High power handling capability
  • Low on-state resistance for reduced power dissipation
  • Fast switching speed for improved efficiency

Advantages

  • Enhanced power management
  • Reduced heat generation
  • Improved system efficiency

Disadvantages

  • Sensitive to voltage spikes
  • Requires careful ESD handling

Working Principles

The PHB23NQ10LT,118 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in power switching applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power management applications including motor control, power supplies, and DC-DC converters. Its high power handling capacity and low on-state resistance make it ideal for systems requiring efficient power switching.

Detailed and Complete Alternative Models

  • IRF540N
  • FDP8870

Note: The alternative models listed above are provided as examples and may not be direct substitutes for all applications.

This comprehensive entry provides an in-depth understanding of the PHB23NQ10LT,118, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi PHB23NQ10LT,118 dalam penyelesaian teknikal

  1. What is PHB23NQ10LT,118?

    • PHB23NQ10LT,118 is a N-channel 100 V, 23 A MOSFET designed for use in power management applications.

  2. What are the key features of PHB23NQ10LT,118?

    • The key features include a low on-resistance, high current capability, and a 100 V voltage rating, making it suitable for various power management solutions.

  3. What are the typical applications for PHB23NQ10LT,118?

    • Typical applications include DC-DC converters, synchronous rectification, motor control, and other power management solutions.

  4. What is the maximum drain-source voltage for PHB23NQ10LT,118?

    • The maximum drain-source voltage is 100 V.

  5. What is the typical on-resistance of PHB23NQ10LT,118?

    • The typical on-resistance is 23 mΩ at a Vgs of 10 V.

  6. Is PHB23NQ10LT,118 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.

  7. Does PHB23NQ10LT,118 require a heatsink for operation?

    • The need for a heatsink depends on the specific application and the power dissipation requirements. It's recommended to consult the datasheet for thermal considerations.

  8. What is the operating temperature range for PHB23NQ10LT,118?

    • The operating temperature range is typically -55°C to 175°C.

  9. Can PHB23NQ10LT,118 be used in automotive applications?

    • Yes, it is suitable for automotive applications due to its robustness and high-temperature capabilities.

  10. Where can I find detailed technical information about PHB23NQ10LT,118?

    • Detailed technical information can be found in the datasheet provided by the manufacturer or distributor of the component.