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2N5771_D75Z

2N5771_D75Z

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, high current capability
  • Package: TO-92
  • Essence: NPN Bipolar Junction Transistor (BJT)
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Maximum Collector-Emitter Voltage: 160V
  • Maximum Collector Current: 1A
  • Power Dissipation: 625mW
  • Transition Frequency: 30MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

  • Collector (C): Pin 1
  • Base (B): Pin 2
  • Emitter (E): Pin 3

Functional Features

  • High voltage and current capability
  • Fast switching speed
  • Low noise and distortion

Advantages and Disadvantages

Advantages

  • Suitable for high-power applications
  • Wide operating temperature range
  • Versatile for various circuit designs

Disadvantages

  • Sensitive to temperature variations
  • Requires careful handling due to static sensitivity

Working Principles

The 2N5771_D75Z operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of signals.

Detailed Application Field Plans

  • Audio amplifiers
  • Power supply circuits
  • Motor control systems
  • RF amplifiers

Detailed and Complete Alternative Models

  • 2N3904
  • BC547
  • 2N2222
  • BC548

This information provides a comprehensive overview of the 2N5771_D75Z transistor, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi 2N5771_D75Z dalam penyelesaian teknikal

  1. What is the 2N5771_D75Z transistor used for?

    • The 2N5771_D75Z is a general-purpose NPN bipolar junction transistor commonly used for amplification and switching applications.
  2. What are the typical operating conditions for the 2N5771_D75Z?

    • The 2N5771_D75Z typically operates at a maximum collector-emitter voltage of 40V and a maximum collector current of 1A.
  3. Can the 2N5771_D75Z be used for audio amplification?

    • Yes, the 2N5771_D75Z can be used for small-signal audio amplification due to its low noise and high gain characteristics.
  4. What are some common circuit configurations for the 2N5771_D75Z?

    • Common circuit configurations include common emitter, common base, and common collector configurations for various amplification and switching purposes.
  5. Is the 2N5771_D75Z suitable for use in low-power switching applications?

    • Yes, the 2N5771_D75Z is suitable for low-power switching applications due to its fast switching speed and moderate power handling capabilities.
  6. What are the thermal considerations when using the 2N5771_D75Z in a design?

    • It is important to consider proper heat sinking and thermal management to ensure the 2N5771_D75Z operates within its specified temperature range for reliable performance.
  7. Are there any specific precautions to be taken when designing with the 2N5771_D75Z?

    • Precautions should be taken to avoid exceeding the maximum ratings for voltage, current, and power dissipation to prevent damage to the transistor.
  8. Can the 2N5771_D75Z be used in high-frequency applications?

    • While the 2N5771_D75Z has moderate frequency capabilities, it may not be suitable for very high-frequency applications due to its transition frequency limitations.
  9. What are the typical gain characteristics of the 2N5771_D75Z?

    • The 2N5771_D75Z typically has a high current gain (hFE) ranging from 100 to 300, making it suitable for many amplification applications.
  10. Where can I find detailed specifications and application notes for the 2N5771_D75Z?

    • Detailed specifications and application notes for the 2N5771_D75Z can be found in the manufacturer's datasheet and application notes, which provide comprehensive information on its usage and performance characteristics.