The FQAF19N20L is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The detailed specifications of the FQAF19N20L include: - Drain-Source Voltage (VDS): 200V - Continuous Drain Current (ID): 19A - RDS(ON) (at VGS = 10V): 0.09Ω - Gate-Source Voltage (VGS): ±20V - Total Power Dissipation (PD): 130W
The FQAF19N20L follows the standard pin configuration for a TO-220 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
The FQAF19N20L operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents in electronic circuits.
The FQAF19N20L finds extensive use in the following application fields: - Power supply units - Motor control circuits - Inverters and converters - Audio amplifiers - High-power LED lighting systems
Some alternative models to the FQAF19N20L include: - IRF540N - STP16NF06L - FQP30N06L - IRLB8748
In summary, the FQAF19N20L power MOSFET offers high current handling, low on-resistance, and fast switching speed, making it a versatile component in various high-power electronic applications.
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What is FQAF19N20L?
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