MJE180PWD
Product Overview
Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-252
Essence: Power transistor for general-purpose applications
Packaging/Quantity: Tape and Reel, 2500 units per reel
Specifications
- Collector-Emitter Voltage (VCEO): 400V
- Collector Current (IC): 5A
- Power Dissipation (PD): 50W
- Transition Frequency (FT): 2MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Base (B)
- Collector (C)
- Emitter (E)
Functional Features
- High voltage capability
- Fast switching speed
- Low saturation voltage
Advantages
- Suitable for a wide range of applications
- Robust construction for reliability
- Low power dissipation
Disadvantages
- Limited frequency response compared to specialized transistors
- Sensitive to temperature variations
Working Principles
MJE180PWD operates as a bipolar junction transistor (BJT) in which the flow of charge carriers is controlled by the application of a small signal to the base terminal, allowing for amplification or switching of electrical signals.
Detailed Application Field Plans
- Power supply circuits
- Audio amplifiers
- Motor control systems
- Lighting control
Detailed and Complete Alternative Models
- MJE13009
- MJE3055
- MJE2955
- TIP31C
This comprehensive entry provides an in-depth understanding of the MJE180PWD power transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MJE180PWD dalam penyelesaian teknikal
What is MJE180PWD?
- MJE180PWD is a high-voltage, high-speed NPN transistor commonly used in power supply and switching applications.
What are the key specifications of MJE180PWD?
- The MJE180PWD has a maximum collector-emitter voltage of 250V, a continuous collector current of 5A, and a transition frequency of 30MHz.
In what types of technical solutions is MJE180PWD commonly used?
- MJE180PWD is often used in applications such as power supplies, inverters, motor control, and general purpose switching circuits.
What are the typical operating conditions for MJE180PWD?
- The typical operating conditions for MJE180PWD include a collector current of 5A, a base current of 1A, and a collector-emitter saturation voltage of 1.5V.
How does MJE180PWD compare to other transistors in its class?
- MJE180PWD offers a good balance of high voltage capability, fast switching speed, and moderate current handling, making it suitable for a wide range of applications.
What are some best practices for using MJE180PWD in a technical solution?
- It's important to ensure proper heat sinking, avoid exceeding the maximum ratings, and provide adequate drive current to the base of the transistor.
Can MJE180PWD be used in high-frequency applications?
- While MJE180PWD has a transition frequency of 30MHz, it may not be suitable for very high-frequency applications where faster transistors are required.
Are there any common failure modes or issues associated with MJE180PWD?
- Common issues include thermal runaway if not properly heat sunk, exceeding maximum ratings leading to breakdown, and insufficient base drive causing poor switching performance.
What are some alternative transistors that can be used in place of MJE180PWD?
- Alternatives to MJE180PWD include similar NPN transistors such as TIP31C, 2N3055, and MJ15003, depending on specific application requirements.
Where can I find detailed application notes and reference designs for using MJE180PWD in technical solutions?
- Detailed application notes and reference designs for MJE180PWD can often be found in the manufacturer's datasheet, application notes, and technical support resources. Additionally, online electronics forums and communities may also provide valuable insights and examples of MJE180PWD usage in various technical solutions.