Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: High voltage, high current, low saturation voltage
Package: TO-220AB
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per tube
Advantages: - Suitable for high power applications - Low saturation voltage - Wide operating temperature range
Disadvantages: - Relatively low transition frequency - Bulkier package compared to SMD alternatives
The UNR921DJ0L operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the voltage applied to the base terminal. When a small current flows into the base, it allows a larger current to flow between the collector and emitter terminals.
In conclusion, the UNR921DJ0L is a high-voltage, high-current transistor suitable for various electronic applications, offering advantages such as low saturation voltage and wide operating temperature range. While it has some limitations, it remains a reliable choice for power-related circuit designs.
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What is UNR921DJ0L?
What are the key features of UNR921DJ0L?
In what technical applications can UNR921DJ0L be used?
What is the maximum voltage and current rating of UNR921DJ0L?
What are the recommended operating conditions for UNR921DJ0L?
How does UNR921DJ0L compare to similar transistors in terms of performance?
Are there any specific design considerations when using UNR921DJ0L in technical solutions?
What are the typical failure modes of UNR921DJ0L and how can they be mitigated?
Can UNR921DJ0L be used in automotive or industrial applications?
Where can I find detailed technical specifications and application notes for UNR921DJ0L?