GP1UD261XK0F

Product Overview

Category: Optoelectronics
Use: Infrared Emitting Diode (IRED)
Characteristics: High efficiency, low power consumption, compact size
Package: Surface mount package
Essence: Infrared emitting diode
Packaging/Quantity: Tape and reel packaging, 3000 pieces per reel

Specifications

Wavelength: 940nm
Forward Current: 50mA
Forward Voltage: 1.2V
Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UD261XK0F has a standard 3-pin configuration with the following pinout: 1. Anode 2. Cathode 3. No Connection

Functional Features

High radiant intensity
Fast response time
Low forward voltage

Advantages and Disadvantages

Advantages

High efficiency
Compact size
Low power consumption

Disadvantages

Limited operating temperature range
Sensitive to electrostatic discharge

Working Principles

The GP1UD261XK0F operates by converting electrical energy into infrared radiation. When a forward current is applied, the diode emits infrared light at a wavelength of 940nm.

Detailed Application Field Plans

The GP1UD261XK0F is widely used in applications such as: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

Some alternative models to GP1UD261XK0F include: - GP1UX311QS - TSAL6200 - SFH4550

In conclusion, the GP1UD261XK0F is a high-performance infrared emitting diode with a compact design and efficient operation. Its applications span across various industries, making it a versatile component in optoelectronic systems.

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