M48Z02-200PC1

Product Overview

Category

M48Z02-200PC1 belongs to the category of non-volatile static random access memory (NVSRAM).

Use

The M48Z02-200PC1 is primarily used for storing critical data in applications where power loss or system failure may occur. It provides reliable non-volatile storage, ensuring data integrity even during unexpected events.

Characteristics

• Non-volatile: The M48Z02-200PC1 retains data even when power is lost.
• Static RAM: It offers fast read and write access times.
• Low power consumption: The device operates with low power requirements.
• High reliability: The M48Z02-200PC1 ensures data integrity and durability.
• Extended temperature range: It can operate in a wide temperature range, making it suitable for various environments.

Package

The M48Z02-200PC1 comes in a standard DIP package.

Essence

The essence of M48Z02-200PC1 lies in its ability to provide non-volatile storage with the speed and convenience of static RAM.

Packaging/Quantity

The M48Z02-200PC1 is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

• Memory Size: 2 kilobits (256 x 8)
• Supply Voltage: 4.5V to 5.5V
• Access Time: 200 nanoseconds
• Standby Current: 100 microamps
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M48Z02-200PC1 has the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Data Input/Output (I/O0-I/O7)
5. Address Inputs (A0-A7)
6. Ground (GND)
7. 5V Power Supply (VCC)

Functional Features

• Non-volatile storage: The M48Z02-200PC1 retains data even when power is lost.
• Fast access times: It provides quick read and write operations.
• Easy integration: The device can be easily integrated into existing systems.
• Low power consumption: The M48Z02-200PC1 operates with low power requirements, extending battery life in portable applications.

Advantages and Disadvantages

Advantages

• Reliable data storage during power loss or system failure.
• Fast access times for efficient data retrieval.
• Low power consumption for extended battery life.
• Easy integration into existing systems.

Disadvantages

• Limited memory size compared to other storage options.
• Higher cost compared to traditional RAM.

Working Principles

The M48Z02-200PC1 combines the benefits of static RAM and non-volatile memory technology. It utilizes a small onboard battery to provide power during system failures, ensuring that critical data remains intact. The device uses a combination of volatile and non-volatile storage elements to achieve fast access times while maintaining data integrity.

Detailed Application Field Plans

The M48Z02-200PC1 is commonly used in various applications, including:

1. Embedded Systems: It is suitable for storing critical system parameters and configuration data in embedded systems.
2. Industrial Automation: The device can be used to store critical process data and settings in industrial automation applications.
3. Medical Devices: It provides reliable storage for patient data and vital information in medical devices.
4. Automotive Electronics: The M48Z02-200PC1 is used in automotive electronics to store critical data such as mileage, engine parameters, and diagnostic information.

Detailed and Complete Alternative Models

1. M48Z02-150PC1: Similar to M48Z02-200PC1 but with a 150 nanosecond access time.
2. M48Z02-70PC1: Similar to M48Z02-200PC1 but with a 70 nanosecond access time.
3. M48Z02-10PC1: Similar to M48Z02-200PC1 but with a 10 nanosecond access time.

These alternative models offer different access times to cater to specific application requirements.

In conclusion, the M48Z02-200PC1 is a non-volatile static RAM that provides reliable data storage in critical applications. Its combination of fast access times, low power consumption, and extended temperature range make it suitable for various industries. While it has limitations in terms of memory size and cost, the device offers essential features for ensuring data integrity during power loss or system failure.