The STB200N4F3 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
The STB200N4F3 follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
The STB200N4F3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow within electronic circuits.
The STB200N4F3 finds extensive use in various applications, including but not limited to: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation
Some alternative models to the STB200N4F3 include: - IRF1405 - FDP8878 - AUIRFN8409
In conclusion, the STB200N4F3 power MOSFET offers high power handling capacity, low on-resistance, and fast switching speed, making it suitable for diverse electronic applications.
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What is the maximum drain-source voltage of STB200N4F3?
What is the continuous drain current of STB200N4F3?
What is the on-state resistance of STB200N4F3?
Can STB200N4F3 be used in automotive applications?
What is the operating temperature range of STB200N4F3?
Does STB200N4F3 require a heat sink for operation?
Is STB200N4F3 RoHS compliant?
What type of package does STB200N4F3 come in?
Can STB200N4F3 be used in switching power supplies?
What are some typical applications for STB200N4F3?