TH58BYG2S3HBAI6

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage and retrieval
• Characteristics:
  • High-speed data transfer
  • Large storage capacity
  • Low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory chip
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Flash memory
• Capacity: 2 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Erase/Write Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The TH58BYG2S3HBAI6 IC has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | HOLD | Suspends ongoing data transfer | | 4 | WP | Write protect | | 5 | SCK | Serial clock input | | 6 | SI | Serial data input | | 7 | SO | Serial data output | | 8 | CS | Chip select |

Functional Features

• High-speed data transfer: The TH58BYG2S3HBAI6 offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Large storage capacity: With a capacity of 2GB, this memory chip can store a significant amount of data.
• Low power consumption: The IC is designed to operate with minimal power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - High-speed data transfer enables quick access to stored information. - Large storage capacity accommodates a wide range of data storage needs. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited erase/write cycles may affect the lifespan of the chip. - The SPI interface may not be compatible with all systems or applications.

Working Principles

The TH58BYG2S3HBAI6 utilizes flash memory technology to store and retrieve data. It employs an SPI interface for communication with external devices. When data is written, the IC stores it in non-volatile memory cells. During read operations, the stored data is retrieved and transferred to the requesting device.

Detailed Application Field Plans

The TH58BYG2S3HBAI6 is commonly used in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Portable media players - Set-top boxes - Automotive infotainment systems

Detailed and Complete Alternative Models

• TH58BYG2S3HBAI7: Similar to TH58BYG2S3HBAI6, but with higher storage capacity (4GB).
• TH58BYG2S3HBAI5: Similar to TH58BYG2S3HBAI6, but with lower storage capacity (1GB).
• TH58BYG2S3HBAI8: Similar to TH58BYG2S3HBAI6, but with extended temperature range (-40°C to +105°C).

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