2N7002E
Product Overview
Category
The 2N7002E is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the semiconductor category.
Use
It is commonly used for low-power switching applications in various electronic circuits.
Characteristics
- Low threshold voltage
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The 2N7002E is typically available in a SOT-23 package, which is a small surface-mount package.
Essence
This MOSFET serves as a fundamental component in electronic devices and circuits, enabling efficient low-power switching.
Packaging/Quantity
It is often supplied in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 115mA
- Total Power Dissipation (PD): 200mW
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The 2N7002E features three pins: 1. Gate (G): Controls the conductivity between the drain and source. 2. Drain (D): Connects to the positive supply voltage. 3. Source (S): Connects to the load or ground, depending on the application.
Functional Features
- Low threshold voltage allows for easy interfacing with microcontrollers and other logic devices.
- Fast switching speed enables rapid response in switching applications.
- Low input capacitance minimizes the impact on high-frequency circuits.
Advantages and Disadvantages
Advantages
- Small form factor
- Low power consumption
- Suitable for low-voltage applications
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to static electricity
Working Principles
When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This principle allows the 2N7002E to act as a switch in electronic circuits.
Detailed Application Field Plans
The 2N7002E finds extensive use in various applications, including: - Low-power switching circuits - Level shifting and signal isolation - LED driver circuits - Battery management systems - Portable electronics
Detailed and Complete Alternative Models
Some alternative models to the 2N7002E include: - BS170 - IRF530 - FDN340P
In conclusion, the 2N7002E MOSFET offers a compact and efficient solution for low-power switching applications, making it a valuable component in modern electronic designs.
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What is the maximum drain-source voltage for 2N7002E?
- The maximum drain-source voltage for 2N7002E is 60V.
What is the continuous drain current rating of 2N7002E?
- The continuous drain current rating of 2N7002E is 115mA.
Can 2N7002E be used for low-power switching applications?
- Yes, 2N7002E is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage of 2N7002E?
- The typical threshold voltage of 2N7002E is around 2.1V.
Is 2N7002E suitable for level shifting applications?
- Yes, 2N7002E can be used for level shifting due to its low threshold voltage and compatibility with different logic levels.
What are the typical applications of 2N7002E in technical solutions?
- Typical applications of 2N7002E include power management, load switching, LED driver circuits, and level shifting.
Does 2N7002E have a low input capacitance?
- Yes, 2N7002E has a low input capacitance, making it suitable for high-frequency switching applications.
Can 2N7002E be used in battery-powered applications?
- Yes, 2N7002E is suitable for battery-powered applications due to its low threshold voltage and low power consumption.
What is the maximum junction temperature for 2N7002E?
- The maximum junction temperature for 2N7002E is 150°C.
Is 2N7002E RoHS compliant?
- Yes, 2N7002E is RoHS compliant, making it suitable for environmentally friendly electronic designs.