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IRFD120
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IRFD120

Product Overview

Category: Electronic Component
Use: Power MOSFET
Characteristics: High voltage, low on-resistance
Package: TO-252
Essence: Power switching
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

  • Voltage - Drain-Source Breakdown (Max): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 700pF @ 25V
  • Power Dissipation (Max): 1.25W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages: - Low on-resistance - High voltage capability - Fast switching speed

Disadvantages: - Higher gate capacitance compared to some alternatives - Limited current handling capacity

Working Principles

The IRFD120 is a power MOSFET designed for high voltage applications. When a sufficient voltage is applied to the gate terminal, it allows current to flow between the drain and source terminals, effectively acting as a switch.

Detailed Application Field Plans

The IRFD120 is commonly used in power supply circuits, motor control, and other high voltage switching applications. Its fast switching speed and low on-resistance make it suitable for efficient power management.

Detailed and Complete Alternative Models

  1. IRFD110
    • Similar specifications with lower voltage rating
  2. IRFD130
    • Higher current handling capacity with similar characteristics

In conclusion, the IRFD120 is a high voltage power MOSFET with fast switching speed and low on-resistance, making it suitable for various power management applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IRFD120 dalam penyelesaian teknikal

  1. What is the IRFD120?

    • The IRFD120 is a power MOSFET transistor designed for various switching applications in electronic circuits.

  2. What are the key specifications of the IRFD120?

    • The IRFD120 has a maximum drain-source voltage of 100V, a continuous drain current of 4.5A, and a low on-resistance for efficient switching.

  3. In what types of technical solutions can the IRFD120 be used?

    • The IRFD120 can be used in applications such as motor control, power supplies, lighting control, and other switching circuits.

  4. How does the IRFD120 compare to similar MOSFET transistors?

    • The IRFD120 offers a balance of performance, cost, and reliability compared to other MOSFETs in its class.

  5. What are the typical operating conditions for the IRFD120?

    • The IRFD120 operates within a temperature range of -55°C to 150°C and is suitable for both low and high-frequency applications.

  6. What are the recommended circuit configurations for using the IRFD120?

    • The IRFD120 can be used in common source or common drain configurations depending on the specific application requirements.

  7. How can the IRFD120 be protected from overcurrent and overvoltage conditions?

    • Overcurrent protection can be implemented using external fuses or current-limiting circuits, while overvoltage protection can be achieved with clamping diodes or transient voltage suppressors.

  8. Are there any specific layout considerations when using the IRFD120 in a PCB design?

    • It's important to minimize parasitic inductance and capacitance in the layout, and to ensure proper thermal management for efficient heat dissipation.

  9. What are the typical failure modes of the IRFD120 and how can they be mitigated?

    • Common failure modes include overcurrent stress and thermal overstress, which can be mitigated through proper current and thermal management in the circuit design.

  10. Where can I find detailed application notes and reference designs for using the IRFD120?

    • Application notes and reference designs for the IRFD120 can be found in the manufacturer's datasheets, application guides, and online technical resources.