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SI2303CDS-T1-E3
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SI2303CDS-T1-E3

Product Overview

Category

The SI2303CDS-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used for switching and amplifying electronic signals in various applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

The SI2303CDS-T1-E3 is typically available in a small SOT-23 package.

Essence

The essence of this product lies in its ability to efficiently control and amplify electronic signals with minimal power loss.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 3.2A
  • On-Resistance (Rds On): 60mΩ
  • Power Dissipation (Pd): 1.25W
  • Gate-Source Voltage (Vgs): ±8V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2303CDS-T1-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Efficient signal amplification
  • Low power dissipation
  • Fast switching capabilities
  • Suitable for low-voltage applications

Advantages

  • Small package size
  • Low on-resistance
  • Wide operating temperature range
  • Versatile application potential

Disadvantages

  • Limited maximum drain-source voltage
  • Sensitivity to static discharge

Working Principles

The SI2303CDS-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications, including: - Power management circuits - Battery protection systems - LED lighting drivers - DC-DC converters - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2303CDS-T1-E3 include: - SI2304DS-T1-GE3 - SI2305DS-T1-GE3 - SI2306DS-T1-GE3

In conclusion, the SI2303CDS-T1-E3 power MOSFET offers efficient signal control and amplification in a compact package, making it suitable for a wide range of electronic applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi SI2303CDS-T1-E3 dalam penyelesaian teknikal

  1. What is the maximum drain-source voltage for SI2303CDS-T1-E3?

    • The maximum drain-source voltage for SI2303CDS-T1-E3 is 20V.

  2. What is the continuous drain current rating of SI2303CDS-T1-E3?

    • The continuous drain current rating of SI2303CDS-T1-E3 is 3.7A.

  3. What is the on-resistance (RDS(on)) of SI2303CDS-T1-E3?

    • The on-resistance (RDS(on)) of SI2303CDS-T1-E3 is typically 60mΩ at VGS = 4.5V.

  4. What is the maximum power dissipation of SI2303CDS-T1-E3?

    • The maximum power dissipation of SI2303CDS-T1-E3 is 1.25W.

  5. Is SI2303CDS-T1-E3 suitable for battery protection applications?

    • Yes, SI2303CDS-T1-E3 is suitable for battery protection applications due to its low on-resistance and high drain-source voltage rating.

  6. Can SI2303CDS-T1-E3 be used in load switching applications?

    • Yes, SI2303CDS-T1-E3 can be used in load switching applications due to its high continuous drain current rating.

  7. What is the recommended operating temperature range for SI2303CDS-T1-E3?

    • The recommended operating temperature range for SI2303CDS-T1-E3 is -55°C to 150°C.

  8. Does SI2303CDS-T1-E3 have built-in ESD protection?

    • Yes, SI2303CDS-T1-E3 has built-in ESD protection, making it suitable for applications where ESD robustness is required.

  9. What is the typical gate threshold voltage of SI2303CDS-T1-E3?

    • The typical gate threshold voltage of SI2303CDS-T1-E3 is 1.3V.

  10. Is SI2303CDS-T1-E3 RoHS compliant?

    • Yes, SI2303CDS-T1-E3 is RoHS compliant, meeting environmental regulations for lead-free and hazardous substance-free materials.