SI2321DS-T1-E3

Product Overview

Category

The SI2321DS-T1-E3 belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications such as power supplies, motor control, and lighting.

Characteristics

• Low on-resistance
• High current capability
• Fast switching speed
• Low gate drive voltage
• Small package size

Package

The SI2321DS-T1-E3 is typically available in a small surface-mount package.

Essence

The essence of this product lies in its ability to efficiently control and manage power in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels containing a specific quantity, typically 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 2.5A
• On-Resistance (RDS(ON)): 75mΩ
• Power Dissipation (PD): 1.25W
• Gate-Source Voltage (VGS): ±8V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2321DS-T1-E3 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

• Low power consumption
• High efficiency
• Reliable performance under varying load conditions
• Enhanced thermal management

Advantages and Disadvantages

Advantages

• Small form factor
• Low power dissipation
• Fast switching speed
• Suitable for low-voltage applications

Disadvantages

• Limited maximum voltage and current ratings
• Sensitivity to electrostatic discharge (ESD)

Working Principles

The SI2321DS-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for use in portable electronics, battery-powered devices, and low-voltage DC-DC converters. It can also be employed in LED lighting systems, motor control circuits, and load switches.

Detailed and Complete Alternative Models

Some alternative models to the SI2321DS-T1-E3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3

In conclusion, the SI2321DS-T1-E3 power MOSFET offers a compact and efficient solution for managing power in various electronic applications, with its low on-resistance and fast switching speed making it suitable for diverse low-voltage designs.

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