SI5404BDC-T1-GE3
Product Overview
Category
The SI5404BDC-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in various electronic circuits and power management applications.
Characteristics
- Low on-resistance
- High current handling capability
- Fast switching speed
- Low gate drive voltage
- Enhanced thermal performance
Package
The SI5404BDC-T1-GE3 is typically available in a compact and efficient package suitable for surface mount applications.
Essence
This product is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The SI5404BDC-T1-GE3 is usually packaged in reels or trays, with varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): [specification]
- Continuous Drain Current (ID): [specification]
- On-Resistance (RDS(on)): [specification]
- Gate-Source Voltage (VGS): [specification]
- Operating Temperature Range: [specification]
Detailed Pin Configuration
The SI5404BDC-T1-GE3 features a standard pin configuration with clearly labeled drain, source, and gate pins. Refer to the datasheet for specific details.
Functional Features
- Efficient power conversion
- Low power dissipation
- Reliable operation under high currents
- Compatibility with various control circuits
Advantages
- High efficiency
- Compact size
- Suitable for high-frequency applications
- Low heat generation
Disadvantages
- Sensitivity to static discharge
- Limited voltage handling capability
Working Principles
The SI5404BDC-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching characteristics to regulate power flow within electronic circuits.
Detailed Application Field Plans
The SI5404BDC-T1-GE3 is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems - DC-DC converters
Detailed and Complete Alternative Models
- SI2302DS-T1-GE3
- SI3456ADN-T1-GE3
- SI7898DP-T1-GE3
- SI6543BDC-T1-GE3
In conclusion, the SI5404BDC-T1-GE3 is a versatile power MOSFET that offers high performance and reliability in various electronic applications, making it an essential component for modern power management solutions.
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What is the maximum voltage rating for SI5404BDC-T1-GE3?
- The maximum voltage rating for SI5404BDC-T1-GE3 is typically 20V.
What is the maximum continuous drain current for SI5404BDC-T1-GE3?
- The maximum continuous drain current for SI5404BDC-T1-GE3 is typically 5.3A.
What is the on-resistance (RDS(on)) of SI5404BDC-T1-GE3?
- The on-resistance (RDS(on)) of SI5404BDC-T1-GE3 is typically 9.5mΩ at VGS = 10V.
What is the gate threshold voltage (VGS(th)) for SI5404BDC-T1-GE3?
- The gate threshold voltage (VGS(th)) for SI5404BDC-T1-GE3 is typically 1.5V to 2.5V.
What is the maximum power dissipation for SI5404BDC-T1-GE3?
- The maximum power dissipation for SI5404BDC-T1-GE3 is typically 2.5W.
Is SI5404BDC-T1-GE3 suitable for automotive applications?
- Yes, SI5404BDC-T1-GE3 is designed for automotive applications and meets AEC-Q101 standards.
What is the operating temperature range for SI5404BDC-T1-GE3?
- The operating temperature range for SI5404BDC-T1-GE3 is typically -55°C to 150°C.
Does SI5404BDC-T1-GE3 have built-in ESD protection?
- Yes, SI5404BDC-T1-GE3 features built-in ESD protection, making it suitable for robust applications.
Can SI5404BDC-T1-GE3 be used in power management applications?
- Yes, SI5404BDC-T1-GE3 is commonly used in power management applications due to its high current handling capability.
What package type does SI5404BDC-T1-GE3 come in?
- SI5404BDC-T1-GE3 is available in a PowerPAK® SO-8 package, which offers low thermal resistance and high power density.