SI5441BDC-T1-GE3

Product Overview

Category

The SI5441BDC-T1-GE3 belongs to the category of integrated circuits, specifically a dual N-channel MOSFET.

Use

This product is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• Low on-resistance
• High current-carrying capability
• Dual N-channel configuration
• Small package size for space-constrained designs

Package

The SI5441BDC-T1-GE3 is typically available in a compact and industry-standard package, such as a DFN or SOIC package.

Essence

The essence of this product lies in its ability to efficiently control and manage power in electronic circuits, offering high performance in a small form factor.

Packaging/Quantity

It is usually supplied in tape and reel packaging, with quantities varying based on manufacturer specifications.

Specifications

• Maximum Drain-Source Voltage: Vds = 30V
• Continuous Drain Current: Id = 6A
• On-Resistance: Rds(on) = 10mΩ (max)
• Power Dissipation: Pd = 2.5W
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5441BDC-T1-GE3 features a standard pin configuration for dual N-channel MOSFETs, with clear labeling for gate, drain, and source pins. Refer to the datasheet for specific details.

Functional Features

• Low on-resistance for minimal power loss
• High current-carrying capability for efficient power management
• Dual N-channel configuration for versatile circuit design options

Advantages

• Efficient power management
• Compact package size
• High current-handling capacity

Disadvantages

• Limited voltage range
• Sensitivity to static discharge

Working Principles

The SI5441BDC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to regulate the flow of current through the device.

Detailed Application Field Plans

This product finds extensive use in various applications, including: - DC-DC converters - Motor control circuits - Battery management systems - LED lighting drivers

Detailed and Complete Alternative Models

• SI5442BDC-T1-GE3
• SI5443BDC-T1-GE3
• SI5444BDC-T1-GE3

These alternative models offer similar functionality and characteristics, providing flexibility in design choices.

In conclusion, the SI5441BDC-T1-GE3 is a versatile and efficient dual N-channel MOSFET that serves as a crucial component in power management applications, offering high performance in a compact package.

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