SI7309DN-T1-GE3
Product Overview
Category
The SI7309DN-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- Low on-resistance
- High current handling capability
- Fast switching speed
- Low gate drive requirements
Package
The SI7309DN-T1-GE3 is typically available in a compact and industry-standard SOT-23 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, typically 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 6.3A
- On-Resistance (RDS(on)): 18mΩ
- Power Dissipation (PD): 2.5W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI7309DN-T1-GE3 features a standard SOT-23 pin configuration with three pins: Drain (D), Source (S), and Gate (G).
Functional Features
- Low on-resistance minimizes power loss
- Fast switching speed enables efficient operation
- High current handling capability supports various applications
- Low gate drive requirements reduce control circuit complexity
Advantages
- Enhanced power efficiency
- Compact form factor
- Suitable for high-frequency applications
- Reliable performance under varying operating conditions
Disadvantages
- Limited maximum voltage and current ratings compared to higher-power MOSFETs
- May require heat sinking in high-power applications
Working Principles
The SI7309DN-T1-GE3 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.
Detailed Application Field Plans
The SI7309DN-T1-GE3 is widely used in: - DC-DC converters - Battery management systems - Motor control circuits - LED lighting applications - Portable electronic devices
Detailed and Complete Alternative Models
- SI7336DP-T1-GE3
- SI7157DP-T1-GE3
- SI7469DP-T1-GE3
- SI7147DP-T1-GE3
In conclusion, the SI7309DN-T1-GE3 power MOSFET offers a balance of performance, size, and efficiency, making it suitable for a wide range of power management applications.
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What is the maximum drain-source voltage of SI7309DN-T1-GE3?
- The maximum drain-source voltage of SI7309DN-T1-GE3 is 30V.
What is the continuous drain current of SI7309DN-T1-GE3?
- The continuous drain current of SI7309DN-T1-GE3 is 6.3A.
What is the on-resistance of SI7309DN-T1-GE3?
- The on-resistance of SI7309DN-T1-GE3 is typically 18mΩ at Vgs=10V.
What is the gate threshold voltage of SI7309DN-T1-GE3?
- The gate threshold voltage of SI7309DN-T1-GE3 is typically 1.5V.
What is the power dissipation of SI7309DN-T1-GE3?
- The power dissipation of SI7309DN-T1-GE3 is 2.5W.
What are the recommended operating temperature range for SI7309DN-T1-GE3?
- The recommended operating temperature range for SI7309DN-T1-GE3 is -55°C to 150°C.
Is SI7309DN-T1-GE3 suitable for automotive applications?
- Yes, SI7309DN-T1-GE3 is suitable for automotive applications.
What package type does SI7309DN-T1-GE3 come in?
- SI7309DN-T1-GE3 comes in a DFN5X6 package.
Does SI7309DN-T1-GE3 have built-in ESD protection?
- Yes, SI7309DN-T1-GE3 has built-in ESD protection.
What are some typical applications for SI7309DN-T1-GE3?
- Some typical applications for SI7309DN-T1-GE3 include power management, load switching, and battery protection in portable devices.