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SIHB28N60EF-GE3
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SIHB28N60EF-GE3

Product Overview

Category

The SIHB28N60EF-GE3 belongs to the category of power semiconductor devices.

Use

It is used in various power electronic applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • High temperature tolerance

Package

The SIHB28N60EF-GE3 is typically available in a TO-220 package.

Essence

This product is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 28A
  • RDS(ON): 0.19Ω
  • Gate Charge: 70nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The SIHB28N60EF-GE3 has a standard TO-220 pin configuration: 1. Source 2. Gate 3. Drain

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast and efficient switching
  • Robust thermal performance

Advantages

  • Enhanced power efficiency
  • Reduced heat dissipation
  • Improved system reliability
  • Suitable for high-power applications

Disadvantages

  • Higher cost compared to standard diode solutions
  • Requires careful thermal management in high-power designs

Working Principles

The SIHB28N60EF-GE3 operates based on the principles of field-effect transistors, utilizing its ability to control current flow through the manipulation of electric fields within the semiconductor material.

Detailed Application Field Plans

The SIHB28N60EF-GE3 is well-suited for use in: - Industrial motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

  • Alternative Model 1: SIHB30N60EF-GE3
    • Voltage Rating: 600V
    • Current Rating: 30A
    • RDS(ON): 0.17Ω
  • Alternative Model 2: SIHB25N60EF-GE3
    • Voltage Rating: 600V
    • Current Rating: 25A
    • RDS(ON): 0.22Ω

In conclusion, the SIHB28N60EF-GE3 is a high-performance power semiconductor device with versatile applications across various industries, offering efficient power management and control capabilities.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi SIHB28N60EF-GE3 dalam penyelesaian teknikal

  1. What is SIHB28N60EF-GE3?

    • SIHB28N60EF-GE3 is a silicon carbide power MOSFET designed for high-frequency and high-efficiency applications.

  2. What are the key features of SIHB28N60EF-GE3?

    • The key features include low on-state resistance, fast switching speed, high temperature operation, and high reliability.

  3. What technical solutions can SIHB28N60EF-GE3 be used in?

    • SIHB28N60EF-GE3 can be used in various technical solutions such as power supplies, motor drives, renewable energy systems, and electric vehicle charging.

  4. What is the maximum voltage and current rating of SIHB28N60EF-GE3?

    • SIHB28N60EF-GE3 has a maximum voltage rating of 600V and a continuous current rating of 28A.

  5. How does SIHB28N60EF-GE3 contribute to high efficiency in power electronics?

    • SIHB28N60EF-GE3's low on-state resistance and fast switching speed help minimize power losses and improve overall system efficiency.

  6. What are the thermal considerations when using SIHB28N60EF-GE3 in a technical solution?

    • Proper heat sinking and thermal management are important to ensure that SIHB28N60EF-GE3 operates within its specified temperature limits for optimal performance and reliability.

  7. Can SIHB28N60EF-GE3 be used in high-frequency applications?

    • Yes, SIHB28N60EF-GE3 is designed for high-frequency operation, making it suitable for applications requiring fast switching and high efficiency.

  8. Are there any application notes or reference designs available for SIHB28N60EF-GE3?

    • Yes, the manufacturer provides application notes and reference designs to assist engineers in implementing SIHB28N60EF-GE3 in their technical solutions.

  9. What are the typical challenges when integrating SIHB28N60EF-GE3 into a design?

    • Challenges may include optimizing gate drive circuitry, managing EMI/RFI emissions, and ensuring compatibility with other system components.

  10. Where can I find detailed technical specifications and datasheets for SIHB28N60EF-GE3?

    • Detailed technical specifications and datasheets for SIHB28N60EF-GE3 can be found on the manufacturer's website or through authorized distributors.