SIHD5N50D-E3

Product Overview

Use

It is used for power switching applications in various electronic circuits and devices.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The SIHD5N50D-E3 is typically available in a TO-252 package.

Essence

This MOSFET is designed to efficiently handle high power and voltage levels in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

Drain-Source Voltage (VDS): 500V
Continuous Drain Current (ID): 5A
On-Resistance (RDS(on)): 1.6Ω
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 12nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHD5N50D-E3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

High voltage capability allows it to be used in various power applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid control of power flow in circuits.

Advantages

Suitable for high voltage applications
Low power dissipation
Enhanced efficiency in power management systems

Disadvantages

Sensitive to static electricity
Requires careful handling during assembly and installation

Working Principles

The SIHD5N50D-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting applications - Inverters and converters

Detailed and Complete Alternative Models

Some alternative models to the SIHD5N50D-E3 include: - IRF840 - FQP50N06 - STP55NF06L - IRL540

In conclusion, the SIHD5N50D-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications in electronic circuits and devices.

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What is SIHD5N50D-E3?
- SIHD5N50D-E3 is a power MOSFET designed for use in various technical solutions, particularly in power management applications.
What are the key features of SIHD5N50D-E3?
- The key features of SIHD5N50D-E3 include a low on-resistance, high current capability, and a rugged design suitable for demanding applications.
What voltage and current ratings does SIHD5N50D-E3 support?
- SIHD5N50D-E3 supports a voltage rating of 500V and a continuous drain current of 5A.
In what technical solutions can SIHD5N50D-E3 be used?
- SIHD5N50D-E3 can be used in various technical solutions such as power supplies, motor control, lighting, and other power management applications.
What are the thermal characteristics of SIHD5N50D-E3?
- SIHD5N50D-E3 has low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
Does SIHD5N50D-E3 have built-in protection features?
- Yes, SIHD5N50D-E3 includes built-in protection against overcurrent, overvoltage, and thermal overload, enhancing its reliability in demanding environments.
Can SIHD5N50D-E3 be used in automotive applications?
- Yes, SIHD5N50D-E3 is suitable for automotive applications, including electric vehicle systems, due to its high voltage and current ratings.
What are the recommended operating conditions for SIHD5N50D-E3?
- The recommended operating conditions for SIHD5N50D-E3 include a maximum junction temperature, gate-source voltage, and drain-source voltage.
Are there any application notes or reference designs available for SIHD5N50D-E3?
- Yes, application notes and reference designs are available to assist in the proper integration of SIHD5N50D-E3 into technical solutions.
Where can I find the datasheet and technical specifications for SIHD5N50D-E3?
- The datasheet and technical specifications for SIHD5N50D-E3 can be found on the manufacturer's website or through authorized distributors.